M58BW016BT

The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double-Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally a 12V VPP supply can be used to provide fast program and erase for a limited time and number of program/erase cycles.

The devices M58BW016B/D support Asynchronous (Latch Controlled and Page Read) and Synchronous Bus operations. The Synchronous Burst Read Interface allows a high data transfer rate controlled by the Burst Clock, K, signal. It is capable of bursting fixed or unlimited lengths of data. The burst type,latency and length are configurable and can be
easily adapted to a large variety of system clock frequencies and microprocessors. All Writes are Asynchronous. On power-up the memory defaults to Read mode with an Asynchronous Bus.The device has a boot block architecture with an array of 8 parameter block of 64Kb each and 31 main blocks of 512Kb each. The parameter blocks can be located at the top of the address space,M58BW016BT, M58BW016DT or at the bottom,M58BW016BB, M58BW016DB.

M58BW016B/D Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the M58BW016B/Dprocess of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a Program or Erase operation can be detected and
any error conditions identified in the Status Register.The command set required to control the memory is consistent with JEDEC standards.Erase can be suspended in order to perform either Read or Program in any other block and then resumed.Program can be suspended to Read data in any other block and then resumed. Each block can be programmed and erased over 100,000 cycles.

M58BW016B/D All blocks are protected during power-up. The M58BW016B features four different levels of block protection to avoid unwanted program/erase operations.TheWPpin offers an hardware protection on two of the parameter blocks and all of the main blocks. The Program and Erase commands can be password protected by the Tuning Protection
command. All Program or Erase operations are blocked when Reset, RP, is held low. The M58BW016D offers the same protection features with the exception of the Tuning Block Protection which is disabled in the factory.

M58BW016B/D A Reset/Power-down mode is entered when the RP input is Low. In this mode the power consumption is lower than in the normal standby mode, the device is write protected and both the Status and the Burst Configuration Registers are cleared. A recovery time is required when theRP input goes High.

The M58BW016B/D memory is offered in PQFP80 (14 x 20mm) and LBGA80 (1.0mm pitch) packages and it is supplied with all the bits erased (set to '1').