M58BF008

Features: ` SUPPLY VOLTAGE VDD = 5V Supply Voltage VDDQ = 3.3V Input/Output Supply Voltage Optional VPP = 12V for fast Program and Erase` CONFIGURABLE OPTIONS Synchronous or Asynchronous write mode Burst Wrap/No-wrap default Critical Word X (3 or 4) and Burst Word Y (1 or 2) latency times`AC...

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M58BF008 Picture
SeekIC No. : 004406086 Detail

M58BF008: Features: ` SUPPLY VOLTAGE VDD = 5V Supply Voltage VDDQ = 3.3V Input/Output Supply Voltage Optional VPP = 12V for fast Program and Erase` CONFIGURABLE OPTIONS Synchronous or Asynchronous write m...

floor Price/Ceiling Price

Part Number:
M58BF008
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/23

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Product Details

Description



Features:

` SUPPLY VOLTAGE
    VDD = 5V Supply Voltage
    VDDQ = 3.3V Input/Output Supply Voltage
    Optional VPP = 12V for fast Program and Erase
` CONFIGURABLE OPTIONS
   Synchronous or Asynchronous write mode
   Burst Wrap/No-wrap default
   Critical Word X (3 or 4) and Burst Word Y (1 or 2) latency times
`ACCESS TIME
   Synchronous X-Y-Y-Y Burst Read up to 40MHz
   Asynchronous Read: 100ns
`PROGRAMMING TIME: 10ms typical
` MEMORY BLOCKS
   32 equal Main blocks of 256 Kbit
   One Overlay block of 256 Kbit
` ELECTRONIC SIGNATURE
   Manufacturer Code: 20h
   Device Code: F0h
   Version Code: 0-7h



Specifications

Symbol
Parameter
Value
Unit
TA
Ambient Operating Temperature
-40to125
°C
TBIAS
Temperature Under Bias
-40to125
°C
TSTG
Storage Temperature
-55to150
°C
VIO
Input or Output Voltage
-0.6toVDDQ+0.6


V
VDD,VDDQ
Supply Voltage
-0.6TO7
V
VPP
Program Voltage
-0.6to13.5
V
Note: 1. Stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device.


Description

The M58BF008 is a family of 8 Mbit non-volatile Flash memories that can be erased electrically at the block level and programmed in-system. M58BF008 Family members are configured during product testing for a specific Synchronous or Asynchronous Write mode, a Burst default of Wrap or No-wrap and for Critical Word X = 3 or 4 and Burst Word Y = 1 or 2 latency times. The M58BF008 Main memory array matrix allows each of the 32 equal blocks of 256 Kbit to be erased separately and re-programmed without affecting other blocks. The M58BF008 memory features a 256 Kbit Overlay block having the same address space as the first Main memory block. The Overlay block provides a secure storage area that is controlled by special Instructions and an external input.A separate supply VDDQ allows the Input/Output signals to be at 3.3V levels, while the main supply VDD is 5V.




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