Features: ` SUPPLY VOLTAGE VDD = 5V Supply Voltage VDDQ = 3.3V Input/Output Supply Voltage Optional VPP = 12V for fast Program and Erase` CONFIGURABLE OPTIONS Synchronous or Asynchronous write mode Burst Wrap/No-wrap default Critical Word X (3 or 4) and Burst Word Y (1 or 2) latency times`AC...
M58BF008: Features: ` SUPPLY VOLTAGE VDD = 5V Supply Voltage VDDQ = 3.3V Input/Output Supply Voltage Optional VPP = 12V for fast Program and Erase` CONFIGURABLE OPTIONS Synchronous or Asynchronous write m...
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Features: 1.SUPPLY VOLTAGE ` VDD = 2.7V to 3.6V for Program, Erase and Read ` VDDQ = VDDQIN = 2.4V...
Features: 1.SUPPLY VOLTAGE ` VDD = 2.7V to 3.6V for Program, Erase and Read ` VDDQ = VDDQIN = 2.4V...
Symbol |
Parameter |
Value
|
Unit |
TA |
Ambient Operating Temperature |
-40to125 |
°C |
TBIAS |
Temperature Under Bias |
-40to125 |
°C |
TSTG |
Storage Temperature |
-55to150 |
°C |
VIO |
Input or Output Voltage |
-0.6toVDDQ+0.6
|
V |
VDD,VDDQ |
Supply Voltage |
-0.6TO7 |
V |
VPP |
Program Voltage |
-0.6to13.5 |
V |
The M58BF008 is a family of 8 Mbit non-volatile Flash memories that can be erased electrically at the block level and programmed in-system. M58BF008 Family members are configured during product testing for a specific Synchronous or Asynchronous Write mode, a Burst default of Wrap or No-wrap and for Critical Word X = 3 or 4 and Burst Word Y = 1 or 2 latency times. The M58BF008 Main memory array matrix allows each of the 32 equal blocks of 256 Kbit to be erased separately and re-programmed without affecting other blocks. The M58BF008 memory features a 256 Kbit Overlay block having the same address space as the first Main memory block. The Overlay block provides a secure storage area that is controlled by special Instructions and an external input.A separate supply VDDQ allows the Input/Output signals to be at 3.3V levels, while the main supply VDD is 5V.