Features: • Performance range• Burst mode operation• Auto & self refresh capability (8192 Cycles/64ms)• LVTTL compatible inputs and outputs• Single 3.3V ± 0.3V power supply• MRS cycle with address key programs Latency (Access from column address) Burst lengt...
M366S3253CTS: Features: • Performance range• Burst mode operation• Auto & self refresh capability (8192 Cycles/64ms)• LVTTL compatible inputs and outputs• Single 3.3V ± 0.3V powe...
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Features: • Performance range• Burst mode operation• Auto & self refresh cap...
Features: • Performance range• Burst mode operation• Auto & self refresh cap...
Features: • Performance range Part No. Max Freq. (Speed) M366S3253DTS-L7C/C...
Parameter |
Symbol |
Value |
Units |
Voltage on any pin relative to VSS |
VIN, VOUT |
-1.0 ~ 4.6 |
V |
Voltage on VDD pin relative to VSS |
VDD,VDDQ |
-1.0 ~ 4.6 |
V |
Storage Temperature |
TSTG |
-55 to ~150 |
°C |
Power dissipation |
PD |
8 |
W |
Short circuit current |
IOS |
50 |
mA |
The Samsung M366S3253CTS is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S3253CTS consists of eight CMOS 32M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The M366S3253CTS is a Dual In-line Memory Module and is intended for mounting into 168-pin edge connector sockets.
Synchronous M366S3253CTS design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies M366S3253CTS allows the same device to be useful for a variety of high bandwidth, high performance memory system applications.