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M366S1723DTS

Features: • Performance range• Burst mode operation• Auto & self refresh capability (4096 Cycles/64ms)• LVTTL compatible inputs and outputs• Single 3.3V ± 0.3V power supply• MRS cycle with address key programs Latency (Access from column address) Burst lengt...

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SeekIC No. : 004404811 Detail

M366S1723DTS: Features: • Performance range• Burst mode operation• Auto & self refresh capability (4096 Cycles/64ms)• LVTTL compatible inputs and outputs• Single 3.3V ± 0.3V powe...

M366S1723DTS Data Sheet

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Part Number:
M366S1723DTS
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/27

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Product Details

Description



Features:

• Performance range
• Burst mode operation
• Auto & self refresh capability (4096 Cycles/64ms)
• LVTTL compatible inputs and outputs
• Single 3.3V ± 0.3V power supply
• MRS cycle with address key programs
   Latency (Access from column address)
   Burst length (1, 2, 4, 8 & Full page)
   Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• Serial presence detect with EEPROM
• PCB : Height (1,375mil), single sided component


Specifications

Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
VIN, VOUT
-1.0 ~ 4.6
V
Voltage on VDD supply relative to Vss
VDD, VDDQ
-1.0 ~ 4.6
V
Storage temperature
TSTG
-55 ~ +150
Power dissipation
PD
8
W
Short circuit current
IOS
50
mA

Note :Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.


Description

The Samsung M366S1723DTS is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S1723DTS consists of eight CMOS 16M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. One 0.1uF and one 0.22 uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM.

The M366S1723DTS is a Dual In-line Memory Module and is intended for mounting into 168-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions M366S1723DTS are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications.




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