Features: Supply voltage VCC = 2.7 to 3.6 V for Program, Erase and Read VCCQ = 1.65 to 3.6 V for I/O buffers VPPH = 12 V for Fast Program (optional) Asynchronous Random/Page Read Page size: 8 words or 16 bytes Page access: 25, 30 ns Random access: 60 (only available upon customer request) or 70, ...
M29W128GL: Features: Supply voltage VCC = 2.7 to 3.6 V for Program, Erase and Read VCCQ = 1.65 to 3.6 V for I/O buffers VPPH = 12 V for Fast Program (optional) Asynchronous Random/Page Read Page size: 8 words...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Symbol | Parameter | Min | Max | Unit |
TBIAS | Temperature under bias | -50 | 125 | |
TSTG | Storage temperature | -65 | 150 | |
VIO | Input or output voltage(1)(2) | −0.6 | VCC + 0.6 | V |
VCC | Supply voltage | −0.6 | 4 | V |
VCCQ | Input/output supply voltage | −0.6 | 4 | V |
VID | Identification voltage | −0.6 | 13.5 | V |
VPPH(3) | Program voltage | −0.6 | 13.5 | V |
The M29W128GH and M29W128GL are 128 Mbit (8 Mb x 16 or 16 Mb x 8) non-volatile Flash memories that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6 V) supply. On power-up the memory defaults to its Read mode.
The memory array M29W128GL is divided into 64-Kword/128-Kbyte uniform blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Program and Erase commands are written to the command interface of the memory. An on-chip Program/Erase controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents.
The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.
Chip Enable, Output Enable and Write Enable signals control the bus operation of the memory. They allow simple connection to most microprocessors, often without additional logic.
The M29W128GH and M29W128GL support Asynchronous Random Read and Page Read from all blocks of the memory array. The devices also feature a Write to Buffer Program capability that improves the programming throughput by programming in one shot a buffer of 32 words/64 bytes. The Enhanced Buffered Program feature is also available to speed up the programming throughput, allowing to program 256 words in one shot (only in x 16 mode). The VPP/WP signal can be used to enable faster programming of the device.
The M29W128GH and M29W128GL have an extra block, the extended block, of 128 words in x 16 mode or of 256 bytes in x 8 mode that can be accessed using a dedicated command.
The extended block can be protected and so is useful for storing security information.
However the protection M29W128GL is not reversible, once protected the protection cannot be undone.
The device features different levels of hardware and software block protection to avoid unwanted program or erase (modify):
Hardware protection:
The VPP/WP provides a hardware protection of the highest and lowest block on the M29W128GH, M29W128GL, respectively.
Software protection:
Volatile protection
Non-volatile protection
Password protection
The M29W128GH and M29W128GL are offered in TSOP56 (14 x 20 mm), and TBGA64 (10 x 13 mm, 1 mm pitch), packages. The memories are delivered with all the bits erased (set to '1').