M29W128GH70N6E

IC FLASH 128MBIT 70NS 56TSOP

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SeekIC No. : 003555330 Detail

M29W128GH70N6E: IC FLASH 128MBIT 70NS 56TSOP

floor Price/Ceiling Price

US $ 1.51~1.51 / Piece | Get Latest Price
Part Number:
M29W128GH70N6E
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~576
  • Unit Price
  • $1.51
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/13

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Product Details

Quick Details

Series: Axcell™ Manufacturer: Micron Technology Inc
Format - Memory: FLASH Available Set Gain : 5.9 dB
Memory Type: FLASH - Nor Memory Size: 128M (16M x 8, 8M x 16)
Speed: 70ns Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C
Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP (14x20)    

Description

Operating Temperature: -40°C ~ 85°C
Format - Memory: FLASH
Voltage - Supply: 2.7 V ~ 3.6 V
Speed: 70ns
Interface: Parallel
Packaging: Tray
Manufacturer: Micron Technology Inc
Memory Type: FLASH - Nor
Series: Axcell™
Memory Size: 128M (16M x 8, 8M x 16)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP (14x20)


Pinout

  Connection Diagram


Description

The M29W128GH70N6E is designed as one kind of 128 Mbit (16 Mb x 8 or 8 Mb x 16, page, uniform block) 3 V supply flash memory device that is divided into 64-Kword/128-Kbyte uniform blocks that can be erased independently so it is possible to preserve valid data while old data is erased.

Features of the M29W128GH70N6E are:(1)supply voltage: Vcc = 2.7 V to 3.6 V for program, erase and read;(2)access times: 70, 90 ns;(3)programming time 10s per byte / word typical;(4)35 memory blocks: 1 boot block (top or bottom location) and 2 parameter and 32 main blocks;(5)program / erase controller - embedded byte / word program algorithms;(6)erase suspend and resume modes - read and program another block during erase suspend;(7)unlock bypass program command - faster production / batch programming;(8)temporary block unprotection mode;(9)low power consumption - standby and automatic standby;(10)100,000 program / erase cycles per block.

The absolute maximum ratings of the M29W128GH70N6E can be summarized as:(1)Temperature Under Bias: -50 to 125 °C;(2)Storage Temperature: -65 to 150 °C;(3)Input or Output Voltage: -0.6 to Vcc+0.6 V;(4)Supply Voltage: -0.6 to 4 V;(5)Identification Voltage: -0.6 to 13.5 V. If you want to know more information such as the electrical characteristics about the M29W128GH70N6E, please download the datasheet in www.seekic.com or www.chinaicmart.com.




Parameters:

Technical/Catalog InformationM29W128GH70N6E
VendorNumonyx/ST Micro
CategoryIntegrated Circuits (ICs)
Memory TypeFLASH
Memory Size128M (16Mx8, 8Mx16)
Speed70ns
InterfaceParallel
Package / Case56-TSOP
PackagingTray
Voltage - Supply2.7 V ~ 3.6 V
Operating Temperature-40°C ~ 85°C
Format - MemoryFLASH
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names M29W128GH70N6E
M29W128GH70N6E



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