M29W128GH

Features: Supply voltage VCC = 2.7 to 3.6 V for Program, Erase and Read VCCQ = 1.65 to 3.6 V for I/O buffers VPPH = 12 V for Fast Program (optional) Asynchronous Random/Page Read Page size: 8 words or 16 bytes Page access: 25, 30 ns Random access: 60 (only available upon customer request) or 70, ...

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SeekIC No. : 004404423 Detail

M29W128GH: Features: Supply voltage VCC = 2.7 to 3.6 V for Program, Erase and Read VCCQ = 1.65 to 3.6 V for I/O buffers VPPH = 12 V for Fast Program (optional) Asynchronous Random/Page Read Page size: 8 words...

floor Price/Ceiling Price

Part Number:
M29W128GH
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

Supply voltage
VCC = 2.7 to 3.6 V for Program, Erase and Read
VCCQ = 1.65 to 3.6 V for I/O buffers
VPPH = 12 V for Fast Program (optional)
Asynchronous Random/Page Read
Page size: 8 words or 16 bytes
Page access: 25, 30 ns
Random access: 60 (only available upon customer request) or 70, 80 ns
Fast Program commands
32 words (64-byte write buffer)
Enhanced Buffered Program commands
256 words
Programming time
16 s per byte/word typical
Chip program time: 5 s with VPPH and 8 s without VPPH
Memory organization
M29128GH/L: 128 main blocks, 128 Kbytes/64 Kwords each
Program/Erase controller
Embedded byte/word program algorithms
Program/ Erase Suspend and Resume
Read from any block during Program Suspend
Read and Program another block during
Erase Suspend
Unlock Bypass/Block Erase/Chip Erase/Write to Buffer/Enhanced Buffered Program commands
Faster Production/Batch Programming
Faster Block and Chip Erase
VPP/WP pin for Fast Program and Write: protects first or last block regardless of block protection settings
Software protection:
Volatile protection
Non-volatile protection
Password protection
Common Flash interface
64 bit security code
128 word extended memory block
Extra block used as security block or to store additional information
Low power consumption
Standby and automatic standby
Minimum 100,000 Program/Erase cycles per block
ECOPACK® packages



Pinout

  Connection Diagram


Specifications

Symbol Parameter Min Max Unit
TBIAS Temperature under bias -50 125
TSTG Storage temperature -65 150
VIO Input or output voltage(1)(2) −0.6 VCC + 0.6 V
VCC Supply voltage −0.6 4 V
VCCQ Input/output supply voltage −0.6 4 V
VID Identification voltage −0.6 13.5 V
VPPH(3) Program voltage −0.6 13.5 V



Description

The M29W128GH and M29W128GL are 128 Mbit (8 Mb x 16 or 16 Mb x 8) non-volatile Flash memories that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6 V) supply. On power-up the memory defaults to its Read mode.

The memory array M29W128GH is divided into 64-Kword/128-Kbyte uniform blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Program and Erase commands are written to the command interface of the memory. An on-chip Program/Erase controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents.

The end of a program or erase operation M29W128GH can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

Chip Enable, Output Enable and Write Enable signals control the bus operation of the memory. They allow simple connection to most microprocessors, often without additional logic.

The M29W128GH and M29W128GL support Asynchronous Random Read and Page Read from all blocks of the memory array. The devices also feature a Write to Buffer Program capability that improves the programming throughput by programming in one shot a buffer of 32 words/64 bytes. The Enhanced Buffered Program feature is also available to speed up the programming throughput, allowing to program 256 words in one shot (only in x 16 mode). The VPP/WP signal can be used to enable faster programming of the device.

The M29W128GH and M29W128GL have an extra block, the extended block, of 128 words in x 16 mode or of 256 bytes in x 8 mode that can be accessed using a dedicated command.

The extended block can be protected and so is useful for storing security information.

However the protection is not reversible, once protected the protection cannot be undone.

The M29W128GH features different levels of hardware and software block protection to avoid unwanted program or erase (modify):
Hardware protection:
The VPP/WP provides a hardware protection of the highest and lowest block on the M29W128GH, M29W128GL, respectively.
Software protection:
Volatile protection
Non-volatile protection
Password protection
The M29W128GH and M29W128GL are offered in TSOP56 (14 x 20 mm), and TBGA64 (10 x 13 mm, 1 mm pitch), packages. The memories are delivered with all the bits erased (set to '1').




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