M29W128FL

Features:

Supply voltage
VCC = 2.7 to 3.6V for Program, Erase and
Read
VPP =12V for Fast Program (optional)
Asynchronous Random/Page Read
Page Width: 8 Words/16 Bytes
Page Access: 25, 30ns
Random Access: 60, 70ns
Programming time
10s per Byte/Word (typical)
4 Words / 8 Bytes Program
32-Word (64-Bytes) Write Buffer
64 KByte (32 KWord) Uniform Blocks
Program/ Erase Suspend and Resume Modes
Read from any Block during Program
Suspend
Read and Program another Block during
Erase Suspend
Unlock Bypass Program
Faster Production/Batch Programming
Common Flash Interface
64 bit Security Code
100,000 Program/Erase cycles per block
Low power consumption
Standby and Automatic Standby
Hardware Block Protection
VPP/WP pin for fast program and write
protect of the highest (M29W128FH) or
lowest block (M29W128FL)
Extended Memory Block:
Extra block used as security block or to store
additional information
Electronic Signature
Manufacturer Code: 0020h
Device Code:
M29W128FH: 227Eh + 2212h + 228Ah
M29W128FL: 227Eh + 2212h + 228Bh
ECOPACK® packages


Pinout




Specifications

Symbol	Parameter	Min	Max	Unit
TBIAS	Temperature Under Bias	− 50	125	°C
TSTG	Storage Temperature	− 65	150	°C
VIO	Input or Output voltage(1)(2)	− 0.6	VCC + 0.6	V
VCC	Supply voltage	− 0.6	4	V
VID	Identification voltage	− 0.6	13.5	V
VPP(3)	Program voltage	− 0.6	13.5	V

Description

The M29W128FH and M29W128FL are 128 Mbit (16Mb x8 or 8Mb x16) non-volatile memories that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. At Power-up the memories default to Read mode. The M29W128FH and M29W128FL are divided into 256 thirty-two KWord (sixty-four KByte) uniform blocks.
Program and Erase commands are written to the Command Interface of the memory. An onchip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.
The Chip Enable, Output Enable and Write Enable signals control the bus operations of the memory. They allow simple connection to most microprocessors, often without additional logic.
The devices support Asynchronous Random Read and Page Read from all blocks of the memory array.
The M29W128FH and M29W128FL have an extra 128 Word (256 Byte) Extended Memory Block that can be accessed using a dedicated command. The Extended Memory Block can be protected and so is useful for storing security information. However the protection is irreversible, once protected the protection cannot be undone.
Each block can be erased independently, so it is possible to preserve valid data while old data is erased.
The devices feature two different levels of hardware block protection to avoid unwanted program or erase (modify):
The VPP/WP pin protects the highest block on the M29W128FH and the lowest block on the M29W128FL.
The RP pin temporarily unprotects all the blocks previously protected using a High Voltage Block Protection technique (see Appendix D: High Voltage Block Protection).
The memories are offered in TSOP56 (14 x 20mm) and TBGA64 (10 x 13mm, 1mm pitch) packages.
In order to meet environmental requirements, Numonyx offers the M29W128FH and the M29W128FL in ECOPACK® packages. ECOPACK packages are Lead-free. The category of second Level Interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label.
The memories are supplied with all the bits erased (set to '1').
The M29W128FH and the M29W128FL will be referred to as M29W128F throughout the document.