M29W128FH-70N6E

The M29W128FH-70N6E is kind of 128 Mbit non-volatile memory that can be read, erased and reprogrammed. The device supports asychronous random read and page read from all blocks of the memory. It has an extra 128 word (256 byte) extended memory block that can be accessed using a dedicated command. The memory is offered in TSOP56 (14*20 mm) package.

What comes next is about the M29W128FH-70N6E features. First is asychronous random/page read. The second is 64 KByte (32 KWord) uniform blocks. Then is program/erase suspend and resume modes. Next is unlock bypass program. The fifth is common flash interface which is 64 bit security code. The sixth is 100,000 program/erase cycles per block. The seventh is low power consumption. The eigth is hardware block protection. The ninth is extended memory block.

The following is about the M29W128FH-70N6E maximum ratings. The TBIAS (Temperature Under Bias) is from -50 to 125. The TSTG (Storage Temperature) is from -65 to 150. The minimum VIO (Input or Output Voltage) is -0.6 V and the maximum is VCC +0.6 V. The minimum VCC (supply voltage) is -0.6 V and the maximum is 4 V. The minimum VID (Identification Voltage) is -0.6 V and the maximum is 13.5 V. The minimum VPP (Program Voltage) is -0.6 V and the maximum is 13.5 V.