M29W102BB-70N1

The M29W102BB-70N1 is a kind of 1 Mbit (64Kb x16) non-volatile memory that can be read, erased and reprogrammed. There are some features as follows. First is single 2.7 to 3.6 V supply voltage for program, erase and read operations. The second is programming time which is 10s per Word typical. Besides, it has 5 memory blocks which includes 1 boot block (top or bottom location), 2 parameter and 2 main blocks. Then is program/erase controller. Next is erase suspend and resume modes. The fifth is unlock bypass program command. The sixth is temporary block unprotection mode. The seventh is 100,000 program/erase cycles per block. The eighth is M27F102 compatible.

The following is about the M29W102BB-70N1 maximum ratings. The TA (Ambient Operating Temperature (Temperature Range Option 1)) is from 0 to 70. The TA (Ambient Operating Temperature (Temperature Range Option 6)) is from -40 to 85. The TBIAS (Temperature Under Bias) is from -50 to 125. The TSTG (Storage Temperature) is from -65 to 150. The VIO (Input or Output Voltage) is from -0.6 to 4 V. The VCC (Supply Voltage) is from -0.6 V to 4 V. The VID (Identification Voltage) is from -0.6 V to 13.5 V.

The last one is about the M29W102BB-70N1 AC measurement conditions. The VCC (Supply Voltage) is from 2.7 to 3.6 V. The load capacitance (CL) is 30 pF. The input rise and fall times is 10 ns. The input pulse voltages is from 0 to 3 V. The input and output timing Ref. voltages is 1.5 V.