M29W040B90K1E

Access Time :
Timing Type :
Supply Voltage - Max : 3.6 V
Supply Voltage - Min : 2.7 V
Mounting Style : SMD/SMT
Packaging : Tube
Memory Type : NOR Flash
Architecture : Sectored
Data Bus Width : 8 bit
Operating Temperature : + 70 C
Interface Type : Parallel
Package / Case : PLCC-32
Memory Size : 4 Mbit
Maximum Operating Current : 10 mA


Pinout




Description

The M29W040B90K1E is a kind of 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.The M29W040B is fully backward compatible with the M29W040. It is available in PLCC32 package.

There are some features M29W040B90K1E as follows: (1) single 2.7 to 3.6 V supply voltage for program, erase and read operations; (2) access time: 90 ns; (3) programming time: 10s per Byte typical; (4) 8 uniform 64 Kbytes memory blocks; (5) program/erase controller: embedded byte program algorithm, embedded multi-block/chip erase algorithm and status register polling and toggle bits; (6) erase suspend and resume modes: read and program another block during erase suspend; (7) unlock bypass program command: faster production/batch programming; (8) low power consumption: standby and automatic standby; (9) 100,000 program/erase cycles per block.

What comes next is about the absolute maximum ratings M29W040B90K1E. (1): VIO (input or output voltage) is from -0.6 to +4 V; (2): VCC (supply voltage) is from -0.6 to +4 V; (3): VID (identification voltage) is from -0.6 to +13.5 V; (4): storage temperature is from -65 to +150; (5): TBIAS (temperature under bias) is from -50 to +125; (6): TA (ambient operating temperature (temperature range option 1)) is from 0 to 70; (7): TA (ambient operating temperature (temperature range option 6)) is from -40 to 85.