M29W040

Features:

M29W040 is replaced by the M29W040B
2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
FAST ACCESS TIME: 100ns
BYTE PROGRAMMING TIME: 12µs typical
ERASE TIME
   Block: 1.5 sec typical
    Chip: 2.5 sec typical
PROGRAM/ERASECONTROLLER (P/E.C.)
   ProgramByte-by-Byte
   Data Polling and Toggle bits Protocol for P/E.C. Status MEMORY ERASE in BLOCKS
   of 64 KBytes each
    Block Protection
   Multiblock Erase
ERASE SUSPEND and RESUME MODES
LOWPOWER CONSUMPTION
   Read mode: 8mAtypical (at 12MHz)
   Stand-bymode: 20µAtypical
   AutomaticStand-by mode
POWER DOWN SOFTWARE COMMAND
   Power-down mode: 1µA typical
100,000PROGRAM/ERASE CYCLES per BLOCK
20 YEARS DATA RETENTION
   Defectivity below 1ppm/year
ELECTRONICSIGNATURE
   Manufacturer Code: 20h
   Device Code: E3h

Pinout




Specifications

 

Symbol	Parameter	Value	Unit
TA	Ambient Operating Temperature (3)	40 to 85	°C
TBIAS	Temperature Under Bias	50 to 125	°C
TSTG	Storage Temperature	65 to 150	°C
VIO(2)	Input or Output Voltages	0.6 to 5	V
VCC	Supply Voltage	0.6 to 5	V
VA9(2)	A9 Voltage	0.6 to 13.5	V

Description

The M29W040 is a non-volatile memory that may be erased electrically at the block level, and pro-grammed Byte-by-Byte.

The interface M29W040 is directly compatible with most mi-croprocessors. PLCC32,TSOP32(8 x 20mm)and TSOP32 (8 x 14mm) packages are available. Both normal and reverse pin outs are available for the TSOP32 (8 x 20mm) package.