M29W017D

Features: ` SUPPLY VOLTAGE VCC = 2.7V to 3.6V for Program, Erase and Read` ACCESS TIME: 70, 90ns` PROGRAMMING TIME 10s per Byte typical` 32 UNIFORM 64 KByte MEMORY BLOCKS` PROGRAM/ERASE CONTROLLER Embedded Byte Program algorithms` ERASE SUSPEND and RESUME MODES Read and Program another Block durin...

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SeekIC No. : 004404408 Detail

M29W017D: Features: ` SUPPLY VOLTAGE VCC = 2.7V to 3.6V for Program, Erase and Read` ACCESS TIME: 70, 90ns` PROGRAMMING TIME 10s per Byte typical` 32 UNIFORM 64 KByte MEMORY BLOCKS` PROGRAM/ERASE CONTROLLER E...

floor Price/Ceiling Price

Part Number:
M29W017D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

` SUPPLY VOLTAGE
VCC = 2.7V to 3.6V for Program, Erase and Read
` ACCESS TIME: 70, 90ns
` PROGRAMMING TIME
10s per Byte typical
` 32 UNIFORM 64 KByte MEMORY BLOCKS
` PROGRAM/ERASE CONTROLLER
Embedded Byte Program algorithms
` ERASE SUSPEND and RESUME MODES
Read and Program another Block during Erase Suspend
` UNLOCK BYPASS PROGRAM COMMAND
Faster Production/Batch Programming
` TEMPORARY BLOCK UNPROTECTION MODE
` COMMON FLASH INTERFACE
64 bit Security Code
` LOW POWER CONSUMPTION
Standby and Automatic Standby
` 100,000 PROGRAM/ERASE CYCLES per BLOCK
` ELECTRONIC SIGNATURE
Manufacturer Code: 20h
Device Code: C8h



Pinout

  Connection Diagram


Specifications

Symbol Parameter Min Max Unit
TBIAS Temperature Under Bias 50 125
TSTG Storage Temperature 65 150
VIO Input or Output Voltage (1,2) 0.6 VCC +0.6 V
VCC Supply Voltage 0.6 4 V
VID Identification Voltage 0.6 13.5 V

Note: 1. Minimum voltage may undershoot to 2V during transition and for less than 20ns during transitions.
          2. Maximum voltage may overshoot to VCC +2V during transition and less than 20ns during transitions.



Description

The M29W017D is a 16 Mbit (2Mb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode  where it can be read in the same way as a ROM or EPROM.

The memory M29W017D is divided into 32 blocks of 64KBytes (see Table 16, Block Addresses) that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

Chip Enable, Output Enable and Write Enable signals M29W017D control the bus operation of the memory. They allow simple connection to most microprocessors,

The memory M29W017D is offered in TSOP40 (10 x 20mm) and TFBGA48 (0.8mm pitch) packages. The memory is supplied with all the bits erased (set to '1').




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