Features: ACCESS TIMES: 70ns, 90ns PROGRAMMING TIME: 10s per Byte typical PROGRAM/ERASE CONTROLLER (P/E.C.) Embedded Byte Program Algorithm Status Register bits and Ready/Busy Output 19 MEMORY BLOCKS 1 Boot Block (Top or Bottom location) 2 Parameter and 16 Main Blocks BLOCK, MULTI-BLOCK and C...
M29W008EB: Features: ACCESS TIMES: 70ns, 90ns PROGRAMMING TIME: 10s per Byte typical PROGRAM/ERASE CONTROLLER (P/E.C.) Embedded Byte Program Algorithm Status Register bits and Ready/Busy Output 19 MEMORY BL...
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Symbol |
Parameter |
Value |
Unit |
TBIAS |
Temperature Under Bias |
50 to 125 |
°C |
TSTG |
Storage Temperature |
65 to 150 |
°C |
TLEAD |
Lead Temperature during Soldering(1) |
260(2) |
°C |
VIO(3) |
Input or Output Voltage |
0.6 to 5 |
V |
VCC |
Supply Voltage |
0.6 to 5 |
V |
VID(3) |
Identification Voltage |
0.6 to 13.5 |
V |
The M29W008EB is a 8 Mbit (1Mb x 8) non-volatile Flash memory that can be read, erased at block, multi-block or chip level and programmed at Byte level. These operations are performed using a single 2.7V to 3.6V VCC supply voltage. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed using standard programming equipment.
The memory is divided into blocks that are asymmetrically arranged. Both M29W008ET and M29W008EB devices have an array of 19 blocks composed of one Boot Block of 16 KBytes, two Parameter Blocks of 8 KBytes, one Main Block of 32 KBytes and fifteen Main Blocks of 64 KBytes. In the M29W008ET, the Boot Block is located at the top of the memory address space while in the M29W008EB, it is located at the bottom. The memory maps are showed in Figure 4: Block Addresses (Top Boot Block) and Figure 5: Block Addresses (Bottom Boot Block). Each block can be erased and reprogrammed independently so it is possible to preserve valid data while old data is erased. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. Erase operations in one block can be temporarily suspended in order to read from or program in blocks that are not being erased. Each block can be programmed and erased over 100,000 cycles.
Each block M29W008EB can be protected independently to prevent accidental Program or Erase commands from modifying the memory. All previously protected blocks can be temporarily unprotected.
In order to meet environmental requirements, ST offers this device in a TSOP40 (10 x 20mm) ECOPACK® package. ECOPACK® packages are Lead-free and RoHS compliant. The category of second Level Interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com.
The M29W008EB is offered in package and supplied with all the bits erased (set to '1').