Features: SUPPLY VOLTAGE
2.7V to 3.6V for Program, Erase and Read
ACCESS TIMES: 70ns, 90ns
PROGRAMMING TIME: 10s per Byte typical
PROGRAM/ERASE CONTROLLER (P/E.C.)
Embedded Byte Program Algorithm
Status Register bits and Ready/Busy Output
19 MEMORY BLOCKS
1 Boot Block (Top or Bottom location)
2 Parameter and 16 Main Blocks
BLOCK, MULTI-BLOCK and CHIP ERASE
MULTIPLE BLOCK PROTECTION/TEMPORARY UNPROTECTION MODE
ERASE SUSPEND and RESUME MODES
LOW POWER CONSUMPTION
Standby and Automatic Standby modes
100,000 PROGRAM/ERASE CYCLES per BLOCK
20 YEARS DATA RETENTION
Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
Manufacturer Code: 20h
M29W008DT Device Code: D2h
M29W008DB Device Code: DCh
Specifications
|
Symbol |
Parameter |
Min |
Max |
Unit |
|
TBIAS |
Temperature Under Bias |
-50 |
125 |
mA |
|
TSTG |
Storage Temperature |
-65 |
150 |
°C |
|
TLEAD |
Lead Temperature During Soldering |
|
2602 |
°C |
|
VID4 |
Identification Voltage |
-6 |
13.5 |
°C |
|
VCC |
Core Supply Voltage |
-0.6 |
5 |
V |
|
VIO3 |
Input or Output Voltage |
-0.6 |
5 |
V |
1. Compliant with the ST 7191395 specification for Lead-free soldering processes.
2. Not exceeding 250°C for more than 30s, and peaking at 260°C
3. VID and VIO may undershoot to 2V during transition and for less than 20ns during transitions.DescriptionThe M29W008DB is a 8 Mbit (1Mb x 8) non-volatile Flash memory that can be read, erased at block, multi-block or chip level and programmed at Byte level. These operations are performed using a single 2.7V to 3.6V VCC supply voltage. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed using standard programming equipment.
The memory is divided into blocks that are asymmetrically arranged. Both M29W008DT and M29W008DB devices have an array of 19 blocks composed of one Boot Block of 16 KBytes, two Parameter Blocks of 8 KBytes, one Main Block of 32 KBytes and fifteen Main Blocks of 64 KBytes. In the M29W008DT, the Boot Block is located at the top of the memory address space while in the M29W008DB, it is located at the bottom. The memory maps are showed in Figure 4., Block Addresses (Top Boot Block) and Figure 5., Block Addresses (Bottom Boot Block). Each block can be erased and reprogrammed independently so it is possible to preserve valid data while old data is erased. Program and Erase commands are written to the Command Interface of the memory. An onchip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. Erase operations in one block can be temporarily suspended in order to read from or program in blocks that are not being erased. Each block can be programmed and erased over 100,000 cycles.
Each block M29W008DB can be protected independently to prevent accidental Program or Erase commands from modifying the memory. All previously protected blocks can be temporarily unprotected.
The M29W008DB is offered in TSOP40 (10 x 20mm) package and supplied with all the bits erased (set to '1').
M29W008DB Data Sheet
