M29W008AB

 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
 ACCESS TIME: 80ns
 PROGRAMMING TIME: 10s typical
PROGRAM/ERASE CONTROLLER (P/E.C.)
   Program Byte-by-Byte
   Status Register bits and Ready/Busy Output
 SECURITY PROTECTION MEMORY AREA
 INSTRUCTIONS ADDRESS CODING: 3 digits
 MEMORY BLOCKS
    Boot Block (Top or Bottom location)
    Parameter and Main blocks
 BLOCK, MULTI-BLOCK and CHIP ERASE
 MULTI BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES
 ERASE SUSPEND and RESUME MODES
    Read and Program another Block during Erase Suspend
 LOW POWER CONSUMPTION
    Stand-by and Automatic Stand-by
 100,000 PROGRAM/ERASE CYCLES per BLOCK
 20 YEARS DATA RETENTION
    Defectivity below 1ppm/year
 ELECTRONIC SIGNATURE
   Manufacturer Code: 20h
   Top Device Code, M29W008AT: D2h
   Bottom Device Code, M29W008AB: DCh

The M29W008AB is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V V_CC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers.

The array matrix organisation M29W008AB allows each block to be erased and reprogrammed without affecting other blocks. Blocks can be protected against programing and erase on programming equipment, and temporarily unprotected to make changes in the application. Each block can be programmed and erased over 100,000 cycles.

Instructions for Read/Reset M29W008AB, Auto Select for reading the Electronic Signature or Block Protection status, Programming, Block and Chip Erase, Erase Suspend and Resume are written to the device in cycles of commands to a Command Interface using standard microprocessor write timings. The device is offered in TSOP40 (10 x 20mm) package.