M29F400T

Features: `5V±10% SUPPLYVOLTAGEfor PROGRAM, ERASE and READ OPERATIONS`FASTACCESS TIME: 55ns`FASTPROGRAMMING TIME 10s by Byte / 16s by Word typical`PROGRAM/ERASE CONTROLLER (P/E.C.) Program Byte-by-Byte or Word-by-Word Status Register bits and Ready/Busy Output`MEMORY BLOCKS Boot Block (Top or ...

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M29F400T Picture
SeekIC No. : 004404387 Detail

M29F400T: Features: `5V±10% SUPPLYVOLTAGEfor PROGRAM, ERASE and READ OPERATIONS`FASTACCESS TIME: 55ns`FASTPROGRAMMING TIME 10s by Byte / 16s by Word typical`PROGRAM/ERASE CONTROLLER (P/E.C.) Program Byte-by...

floor Price/Ceiling Price

Part Number:
M29F400T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

`5V±10% SUPPLYVOLTAGEfor PROGRAM, ERASE and READ OPERATIONS
`FASTACCESS TIME: 55ns
`FASTPROGRAMMING TIME
   10s by Byte / 16s by Word typical
`PROGRAM/ERASE CONTROLLER (P/E.C.)
   Program Byte-by-Byte or Word-by-Word
   Status Register bits and Ready/Busy Output
`MEMORY BLOCKS
   Boot Block (Top or Bottom location)
   Parameter and Main blocks
`BLOCK, MULTI-BLOCK and CHIP ERASE
`MULTI-BLOCKPROTECTION/TEMPORARY UNPROTECTION MODES
`ERASE SUSPEND and RESUME MODES
   Read and Program another Block during Erase Suspend
`LOW POWER CONSUMPTION
   Stand-byand Automatic Stand-by
`100,000 PROGRAM/ERASE CYCLES per BLOCK
`20 YEARSDATARETENTION
   Defectivity below 1ppm/year
`ELECTRONIC SIGNATURE
   Manufacturer Code: 0020h
   Device Code, M29F400T: 00D5h
   Device Code, M29F400B: 00D6h



Pinout

  Connection Diagram


Specifications

Symbol Parameter
Value
Unit
TA Ambient Operating Temperature (3)
40 to 125
TBIAS Temperature Under Bias
50 to 125
TSTG Storage Temperature
-65 to +150
VIO(2) Input or Output Voltages
0.6 to 7
V
VCC Supply Voltage
0.6 to 7
V
V(A9, E, G, RP) (2) A9, E, GRP Voltage
0.6 to 13.5
V

Notes: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "AbsoluteMaximum Ratings" may cause permanent dam ge to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not i mplied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents.
2. Minimum Voltage may undershoot to 2V during transition and for less than 20ns.
3. Depends on range.



Description

The M29F400T is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-ByteorWordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers.

The array matrix organisation M29F400T allows each block to be erased and reprogrammed without affecting other blocks. Blocks can be protected against programing and erase on programming equipment, and temporarily unprotected to make changes in the application.




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