Features: `5V±10% SUPPLYVOLTAGEfor PROGRAM, ERASE and READ OPERATIONS`FASTACCESS TIME: 55ns`FASTPROGRAMMING TIME 10s by Byte / 16s by Word typical`PROGRAM/ERASE CONTROLLER (P/E.C.) Program Byte-by-Byte or Word-by-Word Status Register bits and Ready/Busy Output`MEMORY BLOCKS Boot Block (Top or ...
M29F400T: Features: `5V±10% SUPPLYVOLTAGEfor PROGRAM, ERASE and READ OPERATIONS`FASTACCESS TIME: 55ns`FASTPROGRAMMING TIME 10s by Byte / 16s by Word typical`PROGRAM/ERASE CONTROLLER (P/E.C.) Program Byte-by...
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Symbol | Parameter |
Value |
Unit |
TA | Ambient Operating Temperature (3) |
40 to 125 |
|
TBIAS | Temperature Under Bias |
50 to 125 |
|
TSTG | Storage Temperature |
-65 to +150 |
|
VIO(2) | Input or Output Voltages |
0.6 to 7 |
V |
VCC | Supply Voltage |
0.6 to 7 |
V |
V(A9, E, G, RP) (2) | A9, E, G, RP Voltage |
0.6 to 13.5 |
V |
The M29F400T is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-ByteorWordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers.
The array matrix organisation M29F400T allows each block to be erased and reprogrammed without affecting other blocks. Blocks can be protected against programing and erase on programming equipment, and temporarily unprotected to make changes in the application.