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M29F002B

PinoutSpecifications Symbol Parameter Value Unit TA Ambient Operating Temperature (3) 40 to 125 °C TBIAS Temperature Under Bias 50 to 125 °C TSTG Storage Temperature 65 to 150 °C VIO(2) Input or Output Voltages 0.6 to 7 V VCC ...

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SeekIC No. : 004404354 Detail

M29F002B: PinoutSpecifications Symbol Parameter Value Unit TA Ambient Operating Temperature (3) 40 to 125 °C TBIAS Temperature Under Bias 50 to 125 °C TSTG Stora...

M29F002B Data Sheet

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Part Number:
M29F002B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Pinout

Connection Diagram


Specifications

Symbol
Parameter
Value
Unit
TA
 Ambient Operating Temperature (3)
40 to 125
°C
TBIAS
 Temperature Under Bias
50 to 125
°C
TSTG
 Storage Temperature
65 to 150
°C
VIO(2)
 Input or Output Voltages
0.6 to 7
V
VCC
 Supply Voltage
0.6 to 7
V
V(A9, E, G, RP)(2)
 A9, E, G,RP Voltage
0.6 to 13.5
V



Description

The M29F002B is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis usingonly a single5VVCC supply.For Programand Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers.

The array matrix organisation M29F002B allows each block to be erased and reprogrammed without affecting other blocks. Blocks can be protected against programing and erase on programming equipment, and temporarily unprotected to make changes in the application. Each block can be programmed and erased over 100,000 cycles.




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