Features: `5V±10% SUPPLYVOLTAGEfor PROGRAM, ERASE and READ OPERATIONS
`FASTACCESS TIME: 55ns
`FASTPROGRAMMING TIME
10s by Byte / 16s by Word typical
`PROGRAM/ERASE CONTROLLER (P/E.C.)
Program Byte-by-Byte or Word-by-Word
Status Register bits and Ready/Busy Output
`MEMORY BLOCKS
Boot Block (Top or Bottom location)
Parameter and Main blocks
`BLOCK, MULTI-BLOCK and CHIP ERASE
`MULTI-BLOCKPROTECTION/TEMPORARY UNPROTECTION MODES
`ERASE SUSPEND and RESUME MODES
Read and Program another Block during Erase Suspend
`LOW POWER CONSUMPTION
Stand-byand Automatic Stand-by
`100,000 PROGRAM/ERASE CYCLES per BLOCK
`20 YEARSDATARETENTION
Defectivity below 1ppm/year
`ELECTRONIC SIGNATURE
Manufacturer Code: 0020h
Device Code, M29F400T: 00D5h
Device Code, M29F400B: 00D6hPinout
Specifications
| Symbol |
Parameter |
Value |
Unit |
| TA |
Ambient Operating Temperature (3) |
40 to 125 |
|
| TBIAS |
Temperature Under Bias |
50 to 125 |
|
| TSTG |
Storage Temperature |
-65 to +150 |
|
| VIO(2) |
Input or Output Voltages |
0.6 to 7 |
V |
| VCC |
Supply Voltage |
0.6 to 7 |
V |
| V(A9, E, G, RP) (2) |
A9, E, G,RP Voltage |
0.6 to 13.5 |
V |
Notes: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "AbsoluteMaximum Ratings" may cause permanent dam ge to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not i mplied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents.
2. Minimum Voltage may undershoot to 2V during transition and for less than 20ns.
3. Depends on range.DescriptionThe M29F400B is a kind ofnon-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Wordby-Word basis using only a single 5V VCC supply. Besides, It is organised as 512K x8 or 256Kx16 bits selectable by the BYTE signal. It is replaced by the M29F400BB.
There are some features M29F400B as follows. First is 5V±10% supply voltage for program, erase and read operations. The second is fast access time which is 55 ns. Then is fast programming time which is 10s by Byte/16s by Word typical. Next is program/erase controller. The fifth is memory blocks. The sixth is block, multi-block and chip erase. The seventh is multi-block protection/temporary unprotection modes. The eighth is erase suspend and resume modes. The ninth is low power consumption. The last one is 100,000 program/erase cycles per block.
The following is about the absolute maximum ratings M29F400B. The TA (Ambient Operating Temperature) is from -40 to 125. The TBIAS (Temperature Under Bias) is from -50 to 125. The TSTG(Storage Temperature) is from -65 to 150. The VIO (Input or Output Voltages) is from -0.6 to 7 V. The VCC (Supply Voltage) is from -0.6 to 7 V. The V(A9, E, G, RP) (A9, E, G, RP Voltage) is from -0.6 to 13.5 V.
M29F400B Data Sheet
