M29F200T

Notes:
1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table AbsoluteMaximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not i mplied. Exposure to Absolute MaximumRating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and otherrelevant quality documents.
2. Minimum Voltage may undershoot to 2V during transition and for less than 20ns.
3. Depends on range.

The M29F200T is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-ByteorWordby- Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers.

The array matrix organisation M29F200T allows each block to be erased and reprogrammed without affecting other blocks. Blocks can be protected against programing and erase on programming equipment, and temporarily unprotected to make changes in the application.