M29F100B

Pinout




Specifications

Symbol	Parameter	Value	Unit
TA	Ambient Operating Temperature (3)	40 to 125	°C
TBIAS	Temperature Under Bias	50 to 125	°C
TSTG	Storage Temperature	65 to 150	°C
VIO (2)	Input or Output Voltage	0.6 to 4	V
VCC	Supply Voltage	0.6 to 4	V
V(A9, E, G,RP)(2)	Identification Voltage	0.6 to 13.5	V

Description

The M29F100B is a non-volatile memory that may be erased electrically at the block or chip level and programmedin systemona Byte-by-ByteorWord-by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers.

The arraymatrix organisation M29F100B allows each block to be erased and reprogrammed without affecting other blocks. Blocks can be protected against programing and erase on programming equipment, and temporarily unprotected to make changes in the application. Each block can be programmed and erased over 100,000 cycles.