M29F080D

Features: SUPPLY VOLTAGE VCC = 5V ±10% for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 55, 70, 90ns PROGRAMMING TIME 10s per Byte typical 16 UNIFORM 64Kbyte MEMORY BLOCKS PROGRAM/ERASE CONTROLLER Embedded Byte Program algorithms ERASE SUSPEND and RESUME MODES Read and Program another Bloc...

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SeekIC No. : 004404370 Detail

M29F080D: Features: SUPPLY VOLTAGE VCC = 5V ±10% for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 55, 70, 90ns PROGRAMMING TIME 10s per Byte typical 16 UNIFORM 64Kbyte MEMORY BLOCKS PROGRAM/ERASE CONTRO...

floor Price/Ceiling Price

Part Number:
M29F080D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

SUPPLY VOLTAGE
    VCC = 5V ±10% for PROGRAM, ERASE and READ OPERATIONS
ACCESS TIME: 55, 70, 90ns
PROGRAMMING TIME
    10s per Byte typical
16 UNIFORM 64Kbyte MEMORY BLOCKS
PROGRAM/ERASE CONTROLLER
    Embedded Byte Program algorithms
ERASE SUSPEND and RESUME MODES
    Read and Program another Block during Erase Suspend
UNLOCK BYPASS PROGRAM COMMAND
    Faster Production/Batch Programming
TEMPORARY BLOCK UNPROTECTION MODE
COMMON FLASH INTERFACE
    64 bit Security Code
LOW POWER CONSUMPTION
    Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per BLOCK
ELECTRONIC SIGNATURE
    Manufacturer Code: 20h
    Device Code: F1h



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Min
Max
Unit
TBIAS
Temperature Under Bias
50
125
°C
TSTG
Storage Temperature
65
150
°C
VIO
Input or Output Voltage(1)
0.6
VCC +0.6
V
VCC
Read Supply Voltage
0.6
6
V
VID
Identification Voltage
0.6
13.5
V



Description

The M29F080D is a 8 Mbit (1Mb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

The memory M29F080D is divided into 16 uniform blocks of 64Kbytes (see Figure 5, Block Addresses) that can be erased independently so it is possible to preserve valid data while old data is erased. Blocks can be protected in groups of 4 to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

Chip Enable, Output Enable and Write Enable signals M29F080D control the bus operation of the memory. They allow simple connection to most microprocessors, often without additional logic.

The memory M29F080D is offered in TSOP40 (10 x 20mm) and SO44 packages. Access times of 55, 70 and 90ns are available. The memory is supplied with all the bits erased (set to '1').




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