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M29F040B-45K3R

Features: SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 45nsPROGRAMMING TIME 8ms per Byte typical 8 UNIFORM 64 Kbytes MEMORY BLOCKSPROGRAM/ERASE CONTROLLER Embedded Byte Program algorithm Embedded Multi-Block/Chip Erase algorithm Status Register Polling and To...

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M29F040B-45K3R: Features: SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 45nsPROGRAMMING TIME 8ms per Byte typical 8 UNIFORM 64 Kbytes MEMORY BLOCKSPROGRAM/ERASE CONTROLLER Embe...

M29F040B-45K3R Data Sheet

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Part Number:
M29F040B-45K3R
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
ACCESS TIME: 45ns
PROGRAMMING TIME
8ms per Byte typical
8 UNIFORM 64 Kbytes MEMORY BLOCKS
PROGRAM/ERASE CONTROLLER
Embedded Byte Program algorithm
Embedded Multi-Block/Chip Erase algorithm
Status Register Polling and Toggle Bits
ERASE SUSPEND and RESUME MODES
Read and Program another Block during Erase Suspend
UNLOCK BYPASS PROGRAM COMMAND
Faster Production/Batch Programming
LOW POWER CONSUMPTION
Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per BLOCK
20 YEARS DATA RETENTION
Defectivity below 1 ppm/year
ELECTRONIC SIGNATURE
Manufacturer Code: 20h
Device Code: E2h


Pinout

Connection Diagram


Specifications


Parameter
Value
SYMBOL
 UNIT
Ambient Operating Temperature (Temperature Range Option 1)
0 to 70
TA
°C
Ambient Operating Temperature (Temperature Range Option 6)
40 to 85
°C
Ambient Operating Temperature (Temperature Range Option 3)
40 to 125
°C
Temperature Under Bias
50 to 125
TBIAS
°C

Storage Temperature
65 to 150
TSTG

Input or Output Voltage
0.6 to 6
VIO(2)
V
Supply Voltage
0.6 to 6
VCC
V
Identification Voltage
0.6 to 13.5
V I D
V


Note:
1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table  Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents.
2. Minimum Voltage may undershoot to 2V during transition and for less than 20ns during transitions.




Description

The M29F040B-45K3R is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

The M29F040B-45K3R is fully backward compatible with the M29F040. The memory is divided into blocks that can be erased independently so it is possible to preserve




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