M29F032D

Features: `SUPPLY VOLTAGE VCC = 5V ±10% for PROGRAM, ERASE and READ OPERATIONS` ACCESS TIME: 70 ns` PROGRAMMING TIME 10µs per Byte typical` 64 UNIFORM 64Kbyte MEMORY BLOCKS` PROGRAM/ERASE CONTROLLER Embedded Byte Program algorithms`ERASE SUSPEND and RESUME MODES Read and Program another ...

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M29F032D Picture
SeekIC No. : 004404365 Detail

M29F032D: Features: `SUPPLY VOLTAGE VCC = 5V ±10% for PROGRAM, ERASE and READ OPERATIONS` ACCESS TIME: 70 ns` PROGRAMMING TIME 10µs per Byte typical` 64 UNIFORM 64Kbyte MEMORY BLOCKS` PROGRAM/ERASE CO...

floor Price/Ceiling Price

Part Number:
M29F032D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

`SUPPLY VOLTAGE
   VCC = 5V ±10% for PROGRAM, ERASE and READ OPERATIONS
` ACCESS TIME: 70 ns
` PROGRAMMING TIME
   10µs per Byte typical
` 64 UNIFORM 64Kbyte MEMORY BLOCKS
` PROGRAM/ERASE CONTROLLER
   Embedded Byte Program algorithms
`ERASE SUSPEND and RESUME MODES
   Read and Program another Block during Erase Suspend
` UNLOCK BYPASS PROGRAM COMMAND
   Faster Production/Batch Programming
` TEMPORARY BLOCK UNPROTECTION MODE
` COMMON FLASH INTERFACE
   64 bit Security Code
` LOW POWER CONSUMPTION
   Standby and Automatic Standby
` 100,000 PROGRAM/ERASE CYCLES per BLOCK
` ELECTRONIC SIGNATURE
   Manufacturer Code: 20h
   Device Code: ACh



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Min
Max
Unit
TBIAS
Temperature Under Bias
50
125
TSTG
Storage Temperature
65
150
VIO
Input or Output Voltage (1)
0.6
VCC +0.6
V
VCC
Supply Voltage
0.6
6
V
VID
Identification Voltage
0.6
13.5
V
Note: 1. Minimum Voltage may undershoot to 2V or overshoot to VCC +2V during transition
             for a maximum of 20ns.



Description

The M29F032D is a 32 Mbit (4Mb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

The memory M29F032D is divided into 64 uniform blocks of 64Kbytes (see Figure 5, Block Addresses) that can be erased independently so it is possible to preserve valid data while old data is erased. Blocks can be protected in groups of 4 to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

Chip Enable, Output Enable and Write Enable signals M29F032D control the bus operation of the memory. They allow simple connection to most microprocessors, often without additional logic.

The memory M29F032D is delivered with all the bits erased (set to 1).




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