M29F010B70K1

Timing Type :
Access Time :
Mounting Style : SMD/SMT
Packaging : Tube
Memory Type : NOR Flash
Architecture : Sectored
Maximum Operating Current : 15 mA
Data Bus Width : 8 bit
Memory Size : 1 Mbit
Operating Temperature : + 70 C
Interface Type : Parallel
Supply Voltage - Max : 5.5 V
Supply Voltage - Min : 4.5 V
Package / Case : PLCC-32


Description

The M29F010B70K1 is one member of the M29F010B70 family. The M29F010B is a 1 Mbit (128Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.

Features of the M29F010B70K1 are:(1)Single 5v±10% supply voltage for program, erase and read operations; (2) Access time: 45ns; (3)Programming time 8ms per Byte typical; (4)8 Uniform 16 kbytes memory blocks; (5)Program/erase controller Embedded Byte Program algorithm; Embedded Multi-Block/Chip Erase algorithm; Status Register Polling and Toggle Bits;( 6) Erase suspend and resume modes; Read and Program another Block during Erase Suspend; (7) Unlock bypass program command; Faster Production/Batch Programming; (8 Low power consumption Standby and Automatic Standby; (9100,000 program/erase cycles per block; (10)20 years data retention Defectivity below 1 ppm/year; (11)electronic signature Manufacturer Code: 20h; Device Code: 20h.

The absolute maximum ratings of the M29F010B70K1 can be summarized as:(1)supply voltage: -0.6 to 6V;(2)Input or output Voltage:-0.6 to 6V;(3)Temperature Under Bias:50 to 125°C;(4)Storage Temperature: 65 to 150°C;(5)Identification Voltage:0.6 to 13.5 V. If you want to know more information such as the electrical characteristics about the M29F010B70K1, please download the datasheet in www.seekic.com or www.chinaicmart.com.