M29DW324DT

Features:

SUPPLY VOLTAGE
   VCC = 2.7V to 3.6V for Program, Erase and Read
   VPP =12V for Fast Program (optional)
ACCESS TIME: 70, 90ns
PROGRAMMING TIME
   10µs per Byte/Word typical
   Double Word/ Quadruple Byte Program
MEMORY BLOCKS
   Dual Bank Memory Array: 16Mbit+16Mbit
   Parameter Blocks (Top or Bottom Location)
DUAL OPERATIONS
   Read in one bank while Program or Erase in other
ERASE SUSPEND and RESUME MODES
   Read and Program another Block during Erase Suspend
UNLOCK BYPASS PROGRAM COMMAND
   Faster Production/Batch Programming
VPP/WP PIN for FAST PROGRAM and WRITE PROTECT
TEMPORARY BLOCK UNPROTECTION MODE
COMMON FLASH INTERFACE
   64 bit Security Code
EXTENDED MEMORY BLOCK
   Extra block used as security block or to store additional information
LOW POWER CONSUMPTION
   Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per BLOCK
ELECTRONIC SIGNATURE
   Manufacturer Code: 0020h
   Top Device Code M29DW324DT: 225Ch
   Bottom Device Code M29DW324DB: 225Dh


Pinout




Specifications

Symbol	Parameter	Min	Max	Unit
TBIAS	Temperature Under Bias	50	125	°C
TSTG	Storage Temperature	65	150	°C
VIO	Input or Output Voltage (1,2)	0.6	VCC +0.6	V
VCC	Supply Voltage	0.6	4	V
VID	Identification Voltage	0.6	13.5	V
VPP(3)	Program Voltage	0.6	13.5	V

Description

The M29DW324DT is a 32 Mbit (4Mb x8 or 2Mbx16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

The M29DW324DT features an asymmetrical block architecture. The M29DW324D has an array of 8 parameter and 63 main blocks and is divided into two Banks, A and B, providing Dual Bank operations. While programming or erasing in Bank A, read operations are possible in Bank B and vice versa. Only one bank at a time is allowed to be in program or erase mode. The bank architecture is summarized in Table 2. M29DW324DT locates the Parameter Blocks at the top of the memory address space while the M29DW324DB locates the Parameter Blocks starting from the bottom.