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M25PE80

Features: Industrial Standard SPI Pin-out 8 Mbits of Page-Erasable Flash Memory Page Write (up to 256 Bytes) in 11ms (typical) Page Program (up to 256 Bytes) in 1.2ms(typical) Page Erase (256 Bytes) in 10ms (typical) Sector Erase (512 Kbits) Bulk Erase (8 Mbits) 2.7 to 3.6V Single Supply Voltage ...

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SeekIC No. : 004404198 Detail

M25PE80: Features: Industrial Standard SPI Pin-out 8 Mbits of Page-Erasable Flash Memory Page Write (up to 256 Bytes) in 11ms (typical) Page Program (up to 256 Bytes) in 1.2ms(typical) Page Erase (256 Bytes...

M25PE80 Data Sheet

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Part Number:
M25PE80
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

Industrial Standard SPI Pin-out
8 Mbits of Page-Erasable Flash Memory
Page Write (up to 256 Bytes) in 11ms (typical)
Page Program (up to 256 Bytes) in 1.2ms(typical)
Page Erase (256 Bytes) in 10ms (typical)
Sector Erase (512 Kbits)
Bulk Erase (8 Mbits)
2.7 to 3.6V Single Supply Voltage
SPI Bus Compatible Serial Interface
50MHz Clock Rate (maximum)
Deep Power-down Mode 1µA (typical)
Electronic Signature
JEDEC Standard Two-Byte Signature(8014h)
More than 100,000 Write Cycles
More than 20 Year Data Retention
Hardware Write Protection of the Top Sector(64KB)
Software Write Protection on a 64KByteSector Basis
Software Write Protection on a 4KByte SubsectorBasis for Sector 0 and Sector 15


Pinout

Connection Diagram


Specifications

Symbol
PARAMETER
Min.
Unit
Max.
TSTG
 Storage Temperature

65
°C
 150
TLEAD
 Lead Temperature during Soldering
See note 1
°C
 See note 1
VIO
 Input and Output Voltage (with respect to Ground)
0.6
0.6
V
 4.0
VCC
 Electrostatic Discharge Voltage (Human Body model) 2
0.6
V
4.0
VESD
 DC Output Diode Current
-2000
V
2000



Description

The M25PE80 is an 8 Mbit (1Mb x 8) Serial Paged Flash Memory accessed by a high speed SPIcompatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction.

The Page Write instruction consists of an integrated Page Erase cycle followed by a Page Program cycle. The memory M25PE80 is organized as 16 sectors, each containing 256 pages. Each page is 256 Bytes wide. Thus, the whole memory can be viewed as consisting of 4096 pages, or 1,048,576 Bytes.

The memory M25PE80 can be erased a page at a time, using the Page Erase instruction, a sector at a time, using the Sector Erase instruction, or as a whole, using the Bulk Erase instruction. The memory can be Write Protected by either Hardware or Software, with a protection granularity of either 64 KBytes (sector granularity) or 4 KBytes (sub-sector granularity inside sector 0 and sector 15 only).




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