Features: This device is now designated as Not for New Design . Please use the M25P05-A in all future designs(as described in application note AN1511). ` 512 Kbit of Flash Memory` Page Program (up to 128 Bytes) in 3 ms (typical)` Sector Erase (256 Kbit) in 1 s (typical)` Bulk Erase (512 Kbit) in ...
M25P05: Features: This device is now designated as Not for New Design . Please use the M25P05-A in all future designs(as described in application note AN1511). ` 512 Kbit of Flash Memory` Page Program (up ...
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This device is now designated as "Not for New Design". Please use the M25P05-A in all future designs (as described in application note AN1511).
` 512 Kbit of Flash Memory
` Page Program (up to 128 Bytes) in 3 ms (typical)
` Sector Erase (256 Kbit) in 1 s (typical)
` Bulk Erase (512 Kbit) in 2 s (typical)
` 2.7 V to 3.6 V Single Supply Voltage
` SPI Bus Compatible Serial Interface
` 20 MHz Clock Rate (maximum)
` Deep Power-down Mode 1 mA (typical)
` Electronic Signature
` More than 100,000 Erase/Program Cycles per Sector
` More than 20 Year Data Retention
Symbol |
Parameter |
Min. |
Max. |
Unit |
TSTG | Storage Temperature |
65 |
150 |
|
TLEAD | Lead Temperature during Soldering (20 seconds max.)1 |
235
|
||
VIO | Input or Output range |
-.06 |
4.0 |
V |
VCC | Supply Voltage |
0.6 |
4.0 |
V |
VESD | Electrostatic Discharge Voltage (Human Body model) 2 |
2000 |
2000 |
V |
The M25P05 is a 512 Kbit (64K x 8) Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus.
The memory can be programmed 1 to 128 bytes at a time, using the Page Program instruction.
The memory is organized as 2 sectors, each containing 256 pages. Each page is 128 bytes wide. Thus, the whole memory can be viewed as consisting of 512 pages, or 65536 bytes.
The whole memory M25P05 can be erased using the Bulk Erase instruction, or a sector at a time, using the Sector Erase instruction.