M25P80VMN6T

The M25P80VMN6T belongs to the M25P05-A which is a 512 Kbit (64K x 8) Serial Flash Memory, with advanced write protection mecha- nisms, accessed by a high speed SPI-compatible bus. The whole memory can be erased using the Bulk Erase instruction, or a sector at a time, using the Sector Erase instruction. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The memory is organized as 2 sectors, each con- taining 128 pages. Each page is 256 bytes wide. Thus, the whole memory can be viewed as con- sisting of 256 pages, or 65,536 bytes.

The features of M25P80VMN6T can be summarized as (1)512 Kbit of flash memory; (2)page program (up to 256 Bytes) in 1.5ms (typical); (3)sector erase (256 Kbit) in 2 s (typical); (4)bulk erase (512 Kbit) in 3 s (typical); (5)2.7 V to 3.6 V single supply voltage; (6)SPI bus compatible serial interface; (7)25 MHz clock rate (maximum); (8)deep power-down mode 1 A (typical); (9)electronic signature (05h); (10)more than 100,000 erase/program cycles per sector; (11)more than 20 year data retention.

The absolute maximum ratings of M25P80VMN6T are (1)TSTG storage temperature: -65 to 150 °C; (2)TLEAD lead temperature during soldering SO/(20 seconds max.) VFQFPN: 235/235 °C ; (3)V IO input and output voltage (with respect to ground): -0.6 to 4.0 V; (4)VCC supply voltage: -0.6 to 4.0 V; (5)VESD electrostatic discharge voltage (human body model):2: -2000 to 2000 V(Note: 1. IPC/JEDEC J-STD-020A 2. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500 , R2=500 )).