M25P80-VMN6TP

IC FLASH 8MBIT 75MHZ 8SOIC

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SeekIC No. : 003557106 Detail

M25P80-VMN6TP: IC FLASH 8MBIT 75MHZ 8SOIC

floor Price/Ceiling Price

US $ .43~.57 / Piece | Get Latest Price
Part Number:
M25P80-VMN6TP
Mfg:
Supply Ability:
5000

Price Break

  • Qty
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  • 10~25
  • 25~50
  • 50~100
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  • 250~500
  • 500~1000
  • Unit Price
  • $.57
  • $.52
  • $.51
  • $.51
  • $.45
  • $.45
  • $.44
  • $.43
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/13

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Product Details

Quick Details

Series: Forté™ Manufacturer: Micron Technology Inc
Output Power : 90 mW Format - Memory: FLASH
Memory Type: FLASH - Nor Memory Size: 8M (1M x 8)
Speed: 75MHz Interface: SPI Serial
Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C
Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO    

Description

Operating Temperature: -40°C ~ 85°C
Packaging: Digi-Reel®Alternate Packaging
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Format - Memory: FLASH
Interface: SPI Serial
Voltage - Supply: 2.7 V ~ 3.6 V
Memory Size: 8M (1M x 8)
Speed: 75MHz
Supplier Device Package: 8-SO
Series: Forté™
Manufacturer: Micron Technology Inc
Memory Type: FLASH - Nor


Description

The M25P80-VMN6TP is designed as one kind of 8 Mbit, low voltage, serial Flash memory. Features of the M25P80-VMN6TP are:(1)SPI bus compatible serial interface;(2)75 MHz Clock rate (maximum);(3)2.7 V to 3.6 V single supply voltage;(4)8 Mbit of Flash memory;(5)Page Program (up to 256 bytes) in 0.64 ms (typical);(6)Sector Erase (512 Kbit) in 0.6 s (typical);(7)Bulk Erase (8 Mbit) in 8 s (typical);(8)Hardware Write protection: protected area size defined by three non-volatile bits (BP0, BP1 and BP2);(9)Deep Power-down mode 1 A (typical);(10)More than 100 000 Program/Erase cycles per sector;(11)More than 20 years' data retention.

The absolute maximum ratings of the M25P80-VMN6TP can be summarized as:(1)Storage temperature:65 to 150 °C;(2)Input and output voltage (with respect to ground):0.6 to VCC+0.6 V;(3)Supply voltage: -0.6 to 4.0 V;(4)Electrostatic discharge voltage (Human Body model):2000 to 2000 V.

The electrical characteristics of the M25P80-VMN6TP can be summarized as:(1)Load capacitance: 30 pF;(2)Input rise and fall times: 5 ns;(3)Input pulse voltages: 0.2VCC to 0.8VCC V;(4)Input timing reference voltages: 0.3VCC to 0.7VCC V;(5)Output timing reference voltages: VCC / 2 V;(6)Input leakage current: ±2 A;(7)Output leakage current: ±2 A;(8)Output high voltage: VCC-0.2 V;(9)Output low voltage: 0.4 V. If you want to know more information such as the electrical characteristics about the M25P80-VMN6TP, please download the datasheet in www.seekic.com or www.chinaicmart.com .




Parameters:

Technical/Catalog InformationM25P80-VMN6TP
VendorNumonyx/ST Micro
CategoryIntegrated Circuits (ICs)
Memory TypeFLASH
Memory Size8M (1M x 8)
Speed75MHz
InterfaceSPI, 3-Wire Serial
Package / Case8-SOIC (3.9mm Width)
PackagingTape & Reel (TR)
Voltage - Supply2.7 V ~ 3.6 V
Operating Temperature-40°C ~ 85°C
Format - MemoryFLASH
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names M25P80 VMN6TP
M25P80VMN6TP
M25P80 VMN6TPTR ND
M25P80VMN6TPTRND
M25P80-VMN6TPTR



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