M25P16

Features: ` 16Mbit of Flash Memory` Page Program (up to 256 Bytes) in 1.4ms (typical)` Sector Erase (512 Kbit)` Bulk Erase (16Mbit)` 2.7 to 3.6V Single Supply Voltage` SPI Bus Compatible Serial Interface` 50MHz Clock Rate (maximum)` Deep Power-down Mode 1A (typical)` Electronic Signatures JEDEC S...

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M25P16 Picture
SeekIC No. : 004404180 Detail

M25P16: Features: ` 16Mbit of Flash Memory` Page Program (up to 256 Bytes) in 1.4ms (typical)` Sector Erase (512 Kbit)` Bulk Erase (16Mbit)` 2.7 to 3.6V Single Supply Voltage` SPI Bus Compatible Serial Inte...

floor Price/Ceiling Price

Part Number:
M25P16
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

 ` 16Mbit of Flash Memory
 ` Page Program (up to 256 Bytes) in 1.4ms (typical)
 ` Sector Erase (512 Kbit)
 ` Bulk Erase (16Mbit)
 ` 2.7 to 3.6V Single Supply Voltage
 ` SPI Bus Compatible Serial Interface
 ` 50MHz Clock Rate (maximum)
 ` Deep Power-down Mode 1A (typical)
 ` Electronic Signatures
    JEDEC Standard Two-Byte Signature (2015h)
    RES Instruction, One-Byte, Signature (14h), for backward compatibility
 ` More than 100,000 Erase/Program Cycles per Sector
 ` More than 20 Year Data Retention



Pinout

  Connection Diagram


Specifications

Stressing the device above the rating listed in the Absolute Maximum Ratings" table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents.

Symbol
Parameter
Min.
Max.
Unit
TSTG Storage Temperature
65
150
TLEAD Lead Temperature during Soldering
See note 1
VIO Input and Output Voltage (with respect to Ground)
-.06
4.0
V
VCC Supply Voltage
0.6
4.0
V
VESD Electrostatic Discharge Voltage (Human Body model) 2
2000
2000
V

Note: 1. Compliant with JEDEC Std J-STD-020B (for small body, Sn-Pb or Pb assembly), the ST ECOPACK® 7191395 specification, and the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU
2. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500 , R2=500 )




Description

Memory, with advanced write protection mechanisms M25P16, accessed by a high speed SPI-compatible bus.

The memory M25P16 can be programmed 1 to 256 bytes at a time, using the Page Program instruction.

The memory is organized as 32 sectors, each containing 256 pages. Each page is 256 bytes wide. Thus, the whole memory can be viewed as consisting of 8192 pages, or 2,097,152 bytes.

The whole memory M25P16 can be erased using the Bulk Erase instruction, or a sector at a time, using the Sector Erase instruction.




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