Features: ` 16Mbit of Flash Memory` Page Program (up to 256 Bytes) in 1.4ms (typical)` Sector Erase (512 Kbit)` Bulk Erase (16Mbit)` 2.7 to 3.6V Single Supply Voltage` SPI Bus Compatible Serial Interface` 50MHz Clock Rate (maximum)` Deep Power-down Mode 1A (typical)` Electronic Signatures JEDEC S...
M25P16: Features: ` 16Mbit of Flash Memory` Page Program (up to 256 Bytes) in 1.4ms (typical)` Sector Erase (512 Kbit)` Bulk Erase (16Mbit)` 2.7 to 3.6V Single Supply Voltage` SPI Bus Compatible Serial Inte...
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Symbol |
Parameter |
Min. |
Max. |
Unit |
TSTG | Storage Temperature |
65 |
150 |
|
TLEAD | Lead Temperature during Soldering |
See note 1 |
||
VIO | Input and Output Voltage (with respect to Ground) |
-.06 |
4.0 |
V |
VCC | Supply Voltage |
0.6 |
4.0 |
V |
VESD | Electrostatic Discharge Voltage (Human Body model) 2 |
2000 |
2000 |
V |
Memory, with advanced write protection mechanisms M25P16, accessed by a high speed SPI-compatible bus.
The memory M25P16 can be programmed 1 to 256 bytes at a time, using the Page Program instruction.
The memory is organized as 32 sectors, each containing 256 pages. Each page is 256 bytes wide. Thus, the whole memory can be viewed as consisting of 8192 pages, or 2,097,152 bytes.
The whole memory M25P16 can be erased using the Bulk Erase instruction, or a sector at a time, using the Sector Erase instruction.