DescriptionThe M25P16-VMW6TP is one member of the M25P16 family which is designed as the 16 Mbit, low voltage, serial flash memory. Features of the M25P16-VMW6TP are:(1)16 Mbit of Flash Memory;(2)Page Program (up to 256 Bytes) in 1.4 ms (typical);(3)Sector Erase (512Kbit) in 0.6s (typical);(4)Bulk...
M25P16-VMW6TP: DescriptionThe M25P16-VMW6TP is one member of the M25P16 family which is designed as the 16 Mbit, low voltage, serial flash memory. Features of the M25P16-VMW6TP are:(1)16 Mbit of Flash Memory;(2)Pa...
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The M25P16-VMW6TP is one member of the M25P16 family which is designed as the 16 Mbit, low voltage, serial flash memory. Features of the M25P16-VMW6TP are:(1)16 Mbit of Flash Memory;(2)Page Program (up to 256 Bytes) in 1.4 ms (typical);(3)Sector Erase (512Kbit) in 0.6s (typical);(4)Bulk Erase (16 Mbit) in 13s (typical);(5)2.7 to 3.6V Single Supply Voltage;(6)SPI Bus Compatible Serial Interface;(7)40MHz Clock Rate (maximum);(8)Electronic Signatures: JEDEC Standard Two-Byte Signature (2016h) and RES Instruction, One-Byte, Signature (15h), for backward compatibility;(9)More than 20-Year Data Retention;(10)More than 100,000 Erase/Program Cycles per Sector.
The absolute maximum ratings of the M25P16-VMW6TP can be summarized as:(1)Storage Temperature:65 to 150 °C;(2)Input and Output Voltage (with respect to Ground):0.6 to VCC+0.6 V;(3)Supply Voltage:0.6 to 4.0 V;(4)Electrostatic Discharge Voltage (Human Body model): -2000 to 2000 V.
The electrical characteristics of the M25P16-VMW6TP can be summarized as:(1)Input Leakage Current: ±2 A;(2)Output Leakage Current: ±2 A;(3)Standby Current: 50 A;(4)Deep Power-down Current: 100 A. If you want to know more information such as the electrical characteristics about the M25P16-VMW6TP, please download the datasheet in www.seekic.com or www.chinaicmart.com .