Features: ` 1 Mbit PAGED Flash Memory` 128 BYTE PAGE PROGRAM IN 3 ms TYPICAL` 256 Kbit SECTOR ERASE IN 1 s TYPICAL` BULK ERASE IN 2 s TYPICAL` SINGLE 2.7 V to 3.6 V SUPPLY VOLTAGE` SPI BUS COMPATIBLE SERIAL INTERFACE` MHz CLOCK RATE AVAILABLE`SUPPORTS POSITIVE CLOCK SPI MODES` DEEP POWER DOWN MODE...
M25P10: Features: ` 1 Mbit PAGED Flash Memory` 128 BYTE PAGE PROGRAM IN 3 ms TYPICAL` 256 Kbit SECTOR ERASE IN 1 s TYPICAL` BULK ERASE IN 2 s TYPICAL` SINGLE 2.7 V to 3.6 V SUPPLY VOLTAGE` SPI BUS COMPATIBL...
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Symbol |
Parameter |
Value |
Unit | |
TA | Ambient Operating Temperature |
40 to 85 |
||
TSTG |
Storage Temperature
|
65 to 150 |
||
TLEAD | Lead Temperature during Soldering | SO8: 40 seconds |
215 |
|
VIO | Input or Output range |
0.3 to 5.0 |
V | |
VCC | Supply Voltage |
0.6 to 5.0 |
V | |
VESD | Electrostatic Discharge Voltage (Human Body model) 2 |
2000 |
V |
Note: 1. Except for the rating "Ambient Operating Temperature Range", stresses above those listed in this table may cause permanent damage to the device. These are stress ratings only, and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the ST SURE Program and other relevant quality documents.
2. MIL-STD-883C, 3015.7 (100 pF, 1500 )
The M25P10 is an 1 Mbit Paged Flash Memory fabricated with STMicroelectronics High Endurance CMOS technology. The memory is accessed by a simple SPI bus compatible serial interface. The bus signals are a serial clock input (C), a serial data input (D) and a serial data output (Q).
The M25P10 connected to the bus is selected when the chip select input (S) goes low. Data is clocked in during the low to high transition of clock C, data