M25P10-VMN6TP

The M25P10-VMN6TP is one member of the M25P10 family which is designed as the 1 Mbit low voltage paged flash memory. This device is accessed by a simple SPI bus compatible serial interface. The bus signals are a serial clock input (C), a serial data input (D) and a serial data output (Q), and it is connected to the bus is selected when the chip select input (S) goes low.

Features of the M25P10-VMN6TP are:(1)1 Mbit paged flash memory; (2)128 byte page program in 3 ms typical; (3)256 Kbit sector erase in 1 s typical; (4)bulk erase in 2 s typical; (5)single 2.7 V to 3.6 V supply voltage; (6)SPI bus compatible serial interface; (7)20 MHz clock rate available; (8)supports positive clock SPI modes; (9)deep power down mode (1 A typical); (10)electronic signature; (11)10,000 erase/prog cycles per sector; (12)20 years data retention; (13)40 to 85°C temperature range.

The absolute maximum ratings of the M25P10-VMN6TP can be summarized as:(1)Ambient Operating Temperature:40 to 85 °C;(2)Storage Temperature:65 to 150 °C;(3)Lead Temperature during Soldering: 215 °C;(4)Input and Output Voltage Range (with respect to Ground):0.3 to 5.0 V;(5)Supply Voltage Range:0.6 to 5.0 V;(6)Electrostatic Discharge Voltage (Human Body model): 2000 V.

The electrical characteristics of the M25P10-VMN6TP can be summarized as:(1)Output High Voltage: VCC0.2 V;(2)Output Low Voltage: 0.4 V;(3)Input High Voltage: 0.7Vcc to Vcc+1 V;(4)Operating Current (BE): 15 mA;(5)Operating Current (SE): 15 mA;(6)Input Leakage Current: ±2 A;(7)Output Leakage Current: ±2 A. If you want to know more information such as the electrical characteristics about the M25P10-VMN6TP, please download the datasheet in www.seekic.com or www.chinaicmart.com .