Features: · 1 Mbit of Flash Memory· Page Program (up to 256 Bytes) in 1.5ms (typical)· Sector Erase (256 Kbit) in 2 s (typical)· Bulk Erase (1 Mbit) in 3 s (typical)· 2.7 V to 3.6 V Single Supply Voltage· SPI Bus Compatible Serial Interface· 25 MHz Clock Rate (maximum)· Deep Power-down Mode 1 mA (...
M25P10-A: Features: · 1 Mbit of Flash Memory· Page Program (up to 256 Bytes) in 1.5ms (typical)· Sector Erase (256 Kbit) in 2 s (typical)· Bulk Erase (1 Mbit) in 3 s (typical)· 2.7 V to 3.6 V Single Supply Vo...
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Stressing the device above the rating listed in the Absolute Maximum Ratings" table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents.
Symbol |
Parameter |
Min. |
Max. |
Unit | |
TSTG | Ambient Operating Temperature |
65 |
150 |
||
TLEAD | Lead Temperature during Soldering (20 seconds max.)1 |
SO |
235 |
| |
VFQFPN |
235 |
| |||
VIO | Input or Output range |
-0.6 |
4.0 |
V | |
VCC | Supply Voltage |
0.6 |
4.0 |
V | |
VESD | Electrostatic Discharge Voltage (Human Body model) 2 |
2000 |
2000 |
V |
The M25P10-A is a 1 Mbit (128K x 8) Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus.
The memory M25P10-A can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The memory is organized as 4 sectors, each containing 128 pages. Each page is 256 bytes wide. Thus, the whole memory M25P10-A can be viewed as consisting of 512 pages, or 131,072 bytes. The whole memory can be erased using the Bulk Erase instruction, or a sector at a time, using the Sector Erase instruction.