Features: JEDEC standard 3.3V power supplyLVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs CAS Latency (2 & 3) Burst Length (1, 2, 4, 8 & full page)Burst Type (Sequential & Interleave)All inputs are sampled at the positive going edge of...
M12L64164A: Features: JEDEC standard 3.3V power supplyLVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs CAS Latency (2 & 3) Burst Length (1, 2, 4, 8 & fu...
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Features: SpecificationsDescriptionThe M12L128168A has the following features including JEDEC stan...
JEDEC standard 3.3V power supply
LVTTL compatible with multiplexed address
Four banks operation MRS cycle with address key programs
CAS Latency (2 & 3)
Burst Length (1, 2, 4, 8 & full page)
Burst Type (Sequential & Interleave)
All inputs are sampled at the positive going edge of the system clock
DQM for masking
Auto & self refresh
15.6 s refresh interval
PARAMETER | SYMBOL | VALUE | UNIT |
Voltage on any pin relative to VSS | VIN, VOUT | -1.0 ~ 4.6 | V |
Voltage on VDD supply relative to VSS | VDD, VDDQ | -1.0 ~ 4.6 | V |
Storage temperature | TSTG | -55 ~ +150 | |
Power dissipation | PD | 1 | W |
Short circuit current | IOS | 50 | mA |
The M12L64164A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits. Synchronous design allows precise cycle controls with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same
device to be useful for a variety of high bandwidth, high performance memory system applications.