Features: · X16 organization· EDO (Extended Data-Output) access mode· 2 CAS Byte/Word Read/Write operation· Single 5V ( ± 10%) power supply· TTL-compatible inputs and outputs· 512-cycle refresh in 8ms· Refresh modes : RASonly, C...
M11B416256A: Features: · X16 organization· EDO (Extended Data-Output) access mode· 2 CAS Byte/Word Read/Write operation· Single 5V ( ± 10%) power supply· TTL-com...
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Features: · X16 organization· EDO (Extended Data-Output) access mode· 2 CAS Byte/Word Read/Write o...
Voltage on Any pin Relative to Vss ...................-1V to +7V
Operating Temperature, TA (ambient) ...........0 to +70
Storage Temperature (plastic)....................55 to +150
Power Dissipation ...................................................1.43W
Short Circuit Output Current.....................................50mA
Permanent device damage may occur if "Absolute Maximum Ratings" are exceeded. This is a stress rating only, and functional operation of the device above those conditions indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
The M11B416256A is a randomly accessed solid state memory, organized as 262,144 x 16 bits device. It offers Extended Data-Output , 5V( ± 10%) single power supply. Access time (-25,-28,-30,-35,-40) and package type (SOJ, TSOP II) are optional features of this family. All these family have CAS - before - RAS , RAS -only refresh and Hidden refresh apabilities.
Two access modes are supported by M11B416256A: Byte access and Word access. Use only one of the two CAS and leave the other staying high will result in a BYTE access. WORD access happens when two CAS ( CASL , CASH) are used. CASL transiting low during READ or WRITE cycle will output or input data into the lower byte (IO0~IO7), and CASH transiting low will output or input data into the upper byte (IO8~15).