Features: · X16 organization· EDO (Extended Data-Output) access mode· 2 CAS Byte/Word Read/Write operation· Single 5V ( ± 10%) power supply· TTL-compatible inputs and outputs· 256-cycle refresh in 4ms· Refresh modes : RAS only, CAS BEFORE RAS (CBR) and HIDDEN· JEDEC standard pinout· Key AC Paramet...
M11B11664A: Features: · X16 organization· EDO (Extended Data-Output) access mode· 2 CAS Byte/Word Read/Write operation· Single 5V ( ± 10%) power supply· TTL-compatible inputs and outputs· 256-cycle refresh in 4...
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Voltage on Any pin Relative to Vss..................1V to +7V
Operating Temperature, TA (ambient) ......0 to +70
Storage Temperature (plastic) ..............-55 to +150
Power Dissipation...................................................1.0W
Short Circuit Output Current .................................50mA
Permanent device damage may occur if "Absolute Maximum Ratings" are exceeded. This is a stress rating only, and functional operation of the device above those conditions indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
The M11B11664A is a randomly accessed solid state memory, organized as 65,536 x 16 bits device. It offers Extended
Data-Output , 5V( ± 10%) single power supply. Access time (-25,-30,-35,-40) and package type (SOJ, TSOP II) are optional features of this family. All these family have CAS - before - RAS , RAS -only refresh and Hidden refresh capabilities.
Two access modes are supported by M11B11664A: Byte access and Word access. Use only one of the two CAS and leave the other staying high will result in a BYTE access. WORD access happens when two CAS ( CASL , CASH) are used. CASL transiting low during READ or WRITE cycle will output or input data into the lower byte (IO0~IO7), and CASH ransiting low will output or input data into the upper byte (IO8~15).