Features: ·Fundamental Image Reject Mixer·GaAs HBT Technology·7.0 dB Conversion Loss·20.0 dB Image Rejection·100% On-Wafer RF Testing·100% Visual Inspection to MIL-STD-883 Method 2010Specifications Input Power (IF Pin) +20.0 dBm Input Power (IF Pin) +20.0 dBm Storage Temperature (Tstg...
M1006-BD: Features: ·Fundamental Image Reject Mixer·GaAs HBT Technology·7.0 dB Conversion Loss·20.0 dB Image Rejection·100% On-Wafer RF Testing·100% Visual Inspection to MIL-STD-883 Method 2010Specifications ...
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·Fundamental Image Reject Mixer
·GaAs HBT Technology
·7.0 dB Conversion Loss
·20.0 dB Image Rejection
·100% On-Wafer RF Testing
·100% Visual Inspection to MIL-STD-883 Method 2010
Input Power (IF Pin) | +20.0 dBm |
Input Power (IF Pin) | +20.0 dBm |
Storage Temperature (Tstg) | -65 to +165 |
Operating Temperature (Ta) | -55 to +125 |
Mimix Broadband's 13.0-25.0 GHz GaAs MMIC fundamental image reject Kowari mixer can be used as an up- or down-converter. The device M1006-BD has a conversion loss of 7.0 dB with 20.0 dB image rejection across the band. I and Q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband. This M1006-BD MMIC uses Mimix Broadband's 2 m GaAs HBT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device M1006-BD is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.