Features: · Fundamental Image Reject Mixer· 8.0 dB Conversion Loss· 20.0 dB Image Rejection· +25.0 dBm Input Third Order Intercept (IIP3)· 100% On-Wafer RF Testing· 100% Visual Inspection to MIL-STD-883 Method 2010Specifications Gate Bias Voltage (Vg) +0.3 VDC Input Power (RF Pin) +20.0 ...
M1001: Features: · Fundamental Image Reject Mixer· 8.0 dB Conversion Loss· 20.0 dB Image Rejection· +25.0 dBm Input Third Order Intercept (IIP3)· 100% On-Wafer RF Testing· 100% Visual Inspection to MIL-STD...
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Gate Bias Voltage (Vg) | +0.3 VDC |
Input Power (RF Pin) | +20.0 dBm |
Input Power (IF Pin) | +20.0 dBm |
Storage Temperature (Tstg) | -65 to +165 |
Operating Temperature (Ta) | -55 to +125 |
Mimix Broadband's 12.0-40.0 GHz GaAs MMIC fundamental image reject mixer can be used as an up- or down-converter. The device M1001 has a conversion loss of 8.0 dB with a 20.0 dB image rejection across the band. I and Q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip M1001 has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.