M1001

Features: · Fundamental Image Reject Mixer· 8.0 dB Conversion Loss· 20.0 dB Image Rejection· +25.0 dBm Input Third Order Intercept (IIP3)· 100% On-Wafer RF Testing· 100% Visual Inspection to MIL-STD-883 Method 2010Specifications Gate Bias Voltage (Vg) +0.3 VDC Input Power (RF Pin) +20.0 ...

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SeekIC No. : 004403866 Detail

M1001: Features: · Fundamental Image Reject Mixer· 8.0 dB Conversion Loss· 20.0 dB Image Rejection· +25.0 dBm Input Third Order Intercept (IIP3)· 100% On-Wafer RF Testing· 100% Visual Inspection to MIL-STD...

floor Price/Ceiling Price

Part Number:
M1001
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/15

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Product Details

Description



Features:

· Fundamental Image Reject Mixer
· 8.0 dB Conversion Loss
· 20.0 dB Image Rejection
· +25.0 dBm Input Third Order Intercept (IIP3)
· 100% On-Wafer RF Testing
· 100% Visual Inspection to MIL-STD-883
     Method 2010



Specifications

Gate Bias Voltage (Vg) +0.3 VDC
Input Power (RF Pin) +20.0 dBm
Input Power (IF Pin) +20.0 dBm
Storage Temperature (Tstg) -65 to +165
Operating Temperature (Ta) -55 to +125



Description

Mimix Broadband's 12.0-40.0 GHz GaAs MMIC fundamental image reject mixer can be used as an up- or down-converter. The device M1001 has a conversion loss of 8.0 dB with a 20.0 dB image rejection across the band. I and Q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip M1001 has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.




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