Features: ·Balanced Image Reject Mixer·12.0 dB Conversion Loss·20.0 dB Image Rejection·33.0 dBm LO to RF Rejection·+27.0 dBm Input Third Order Intercept (IIP3)·100% On-Wafer RF Testing·100% Visual Inspection to MIL-STD-883 Method 2010Specifications Gate Bias Voltage (Vg) +0.3 VDC Input Po...
M1005-BD: Features: ·Balanced Image Reject Mixer·12.0 dB Conversion Loss·20.0 dB Image Rejection·33.0 dBm LO to RF Rejection·+27.0 dBm Input Third Order Intercept (IIP3)·100% On-Wafer RF Testing·100% Visual I...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Gate Bias Voltage (Vg) | +0.3 VDC |
Input Power (IF Pin) | +20.0 dBm |
Input Power (IF Pin) | +20.0 dBm |
Storage Temperature (Tstg) | -65 to +165 |
Operating Temperature (Ta) | -55 to +125 |
Mimix Broadband's 37.0-46.0 GHz GaAs MMIC balanced image reject mixer can be used as an up- or down-converter. The device M1005-BD has a conversion loss of 12.0 dB with a 20.0 dB image rejection across the band. I and Q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip M1005-BD has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device M1005-BD is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.