M1005-BD

Features: ·Balanced Image Reject Mixer·12.0 dB Conversion Loss·20.0 dB Image Rejection·33.0 dBm LO to RF Rejection·+27.0 dBm Input Third Order Intercept (IIP3)·100% On-Wafer RF Testing·100% Visual Inspection to MIL-STD-883 Method 2010Specifications Gate Bias Voltage (Vg) +0.3 VDC Input Po...

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SeekIC No. : 004403871 Detail

M1005-BD: Features: ·Balanced Image Reject Mixer·12.0 dB Conversion Loss·20.0 dB Image Rejection·33.0 dBm LO to RF Rejection·+27.0 dBm Input Third Order Intercept (IIP3)·100% On-Wafer RF Testing·100% Visual I...

floor Price/Ceiling Price

Part Number:
M1005-BD
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

·Balanced Image Reject Mixer
·12.0 dB Conversion Loss
·20.0 dB Image Rejection
·33.0 dBm LO to RF Rejection
·+27.0 dBm Input Third Order Intercept (IIP3)
·100% On-Wafer RF Testing
·100% Visual Inspection to MIL-STD-883 Method 2010



Specifications

Gate Bias Voltage (Vg) +0.3 VDC
Input Power (IF Pin) +20.0 dBm
Input Power (IF Pin) +20.0 dBm
Storage Temperature (Tstg) -65 to +165
Operating Temperature (Ta) -55 to +125



Description

Mimix Broadband's 37.0-46.0 GHz GaAs MMIC balanced image reject mixer can be used as an up- or down-converter. The device M1005-BD has a conversion loss of 12.0 dB with a 20.0 dB image rejection across the band. I and Q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip M1005-BD has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device M1005-BD is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.




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