Features: ·Sub-harmonic Image Reject Mixer·GaAs HBT Technology·9.0 dB Conversion Loss·18.0 dB Image Rejection·100% On-Wafer RF Testing·100% Visual Inspection to MIL-STD-883·Method 2010Specifications Input Power (RF Pin) +20 dBm Input Power (IF Pin) +20 dBm Storage Temperature (Tstg) ...
M1003-BD: Features: ·Sub-harmonic Image Reject Mixer·GaAs HBT Technology·9.0 dB Conversion Loss·18.0 dB Image Rejection·100% On-Wafer RF Testing·100% Visual Inspection to MIL-STD-883·Method 2010Specifications...
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Input Power (RF Pin) | +20 dBm |
Input Power (IF Pin) | +20 dBm |
Storage Temperature (Tstg) | -65 to +165 |
Operating Temperature (Ta) | -55 to +125 |
Mimix Broadband's 32.0-42.0 GHz GaAs MMIC sub-harmonic image reject mixer can be used as an upor down-converter. The device has a conversion loss of 9.0 dB with 18.0 dB image rejection across the band. I and Q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband. This M1003-BD MMIC uses Mimix Broadband's 2 m GaAs HBT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.
The chip M1003-BD has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.