M1003-BD

Features: ·Sub-harmonic Image Reject Mixer·GaAs HBT Technology·9.0 dB Conversion Loss·18.0 dB Image Rejection·100% On-Wafer RF Testing·100% Visual Inspection to MIL-STD-883·Method 2010Specifications Input Power (RF Pin) +20 dBm Input Power (IF Pin) +20 dBm Storage Temperature (Tstg) ...

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SeekIC No. : 004403869 Detail

M1003-BD: Features: ·Sub-harmonic Image Reject Mixer·GaAs HBT Technology·9.0 dB Conversion Loss·18.0 dB Image Rejection·100% On-Wafer RF Testing·100% Visual Inspection to MIL-STD-883·Method 2010Specifications...

floor Price/Ceiling Price

Part Number:
M1003-BD
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

·Sub-harmonic Image Reject Mixer
·GaAs HBT Technology
·9.0 dB Conversion Loss
·18.0 dB Image Rejection
·100% On-Wafer RF Testing
·100% Visual Inspection to MIL-STD-883
·Method 2010



Specifications

Input Power (RF Pin) +20 dBm
Input Power (IF Pin) +20 dBm
Storage Temperature (Tstg) -65 to +165
Operating Temperature (Ta) -55 to +125



Description

Mimix Broadband's 32.0-42.0 GHz GaAs MMIC sub-harmonic image reject mixer can be used as an upor down-converter. The device has a conversion loss of 9.0 dB with 18.0 dB image rejection across the band. I and Q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband. This M1003-BD MMIC uses Mimix Broadband's 2 m GaAs HBT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.

The chip M1003-BD has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.




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