LXE18400X

Features: ·Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR·Interdigitated structure provides high emitter efficiency·Gold metallization realizes very good stability of the characteristics and excellent lifetime·Multicell geometry gives good ba...

product image

LXE18400X Picture
SeekIC No. : 004403588 Detail

LXE18400X: Features: ·Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR·Interdigitated structure provides high emitter efficiency·Gold metallization realize...

floor Price/Ceiling Price

Part Number:
LXE18400X
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/29

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

·Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
·Interdigitated structure provides high emitter efficiency
·Gold metallization realizes very good stability of the characteristics and excellent lifetime
·Multicell geometry gives good balance of dissipated power and low thermal resistance
·nternal input and output prematching ensures good stability and allows an easier design of wideband circuits.




Application

Intended for use in common emitter, class AB amplifiers in CW conditions for military and professional applications between 1.7 and 2 GHz.




Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage open emitter - 45 V
VCER collector-emitter voltage RBE = 220 - 30 V
VCEO collector-emitter voltage open base - 25 V
VEBO emitter-base voltage open collector - 3 V

IC

collector current (DC)   - 9 A
Pi input power f = 1.85 GHz; VCE = 24 V; class AB - 12 W
Ptot total power dissipation Tmb = 75 - 70 W
Tstg storage temperature   -65 +150
Tj junction temperature   - 200
Tsld soldering temperature t 10 s; note 1 - 235



Description

NPN silicon planar epitaxia microwave power transistor LXE18400X in a SOT439A metal ceramic flange package, with emitter connected to flange




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
RF and RFID
Optoelectronics
Connectors, Interconnects
Boxes, Enclosures, Racks
Circuit Protection
Undefined Category
View more