Features: ·Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR·Interdigitated structure provides high emitter efficiency·Gold metallization realizes very good stability of the characteristics and excellent lifetime·Multicell geometry gives good ba...
LXE18400X: Features: ·Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR·Interdigitated structure provides high emitter efficiency·Gold metallization realize...
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Features: · Brightness control input conditioning: linear DC, potentiometer and/or PWM op-amp circ...
·Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
·Interdigitated structure provides high emitter efficiency
·Gold metallization realizes very good stability of the characteristics and excellent lifetime
·Multicell geometry gives good balance of dissipated power and low thermal resistance
·nternal input and output prematching ensures good stability and allows an easier design of wideband circuits.
Intended for use in common emitter, class AB amplifiers in CW conditions for military and professional applications between 1.7 and 2 GHz.
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
VCBO | collector-base voltage | open emitter | - | 45 | V |
VCER | collector-emitter voltage | RBE = 220 | - | 30 | V |
VCEO | collector-emitter voltage | open base | - | 25 | V |
VEBO | emitter-base voltage | open collector | - | 3 | V |
IC |
collector current (DC) | - | 9 | A | |
Pi | input power | f = 1.85 GHz; VCE = 24 V; class AB | - | 12 | W |
Ptot | total power dissipation | Tmb = 75 | - | 70 | W |
Tstg | storage temperature | -65 | +150 | ||
Tj | junction temperature | - | 200 | ||
Tsld | soldering temperature | t 10 s; note 1 | - | 235 |
NPN silicon planar epitaxia microwave power transistor LXE18400X in a SOT439A metal ceramic flange package, with emitter connected to flange