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LX703

Specifications Total Device Dissipation Junction to Case Thermal Resistance Maximum Junction Temperature Storage Temperature DC Drain Current Drain to Gate Voltage Drain to Sourc...

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SeekIC No. : 004403512 Detail

LX703: Specifications Total Device Dissipation Junction to Case Thermal Resistance Maximum Junction Temperature Storage Temp...

LX703 Data Sheet

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Part Number:
LX703
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/9/27

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Product Details

Description



Specifications

Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
220 Watts
0.75 /W
200
-65 to 150
13C0A
70V
70V
20V



Description

Silicon VDMOS and LDMOS transistors LX703 designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others."Polyfet" TM process features low feedback and output capacitances resulting in high F transistors with high input impedance and high efficiency.




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