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LTE42012R

Features: · Interdigitated structure provides high emitter efficiency· Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR· Gold metallization realizes very stable characteristics and excellent lifetime· Multicell geometry gives good balance of diss...

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SeekIC No. : 004402728 Detail

LTE42012R: Features: · Interdigitated structure provides high emitter efficiency· Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR· Gold metallization realiz...

LTE42012R Data Sheet

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Part Number:
LTE42012R
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

· Interdigitated structure provides high emitter efficiency
· Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR
· Gold metallization realizes very stable characteristics and excellent lifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance
· Input matching cell improves input impedance and allows an easier design of wideband circuits.


Application

· Common emitter class-A power amplifiers up to 4.2 GHz in CW conditions for military and professional applications.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 40 V
VCER collector-emitter voltage RBE =70W - 20 V
VCEO emitter-base voltage open base - 16 V
VEBO emitter-base voltage open collector - 3 V
IC DC collector current (DC)   - 800 mA
Ptot total power dissipation Tmb<= 75 °C - 8 W
Tstg storage temperature   -65 +200 °C
Tj operating junction temperature   - 200 °C
Tsld soldering temperature at 0.3 mm from ceramic;
t <= 10 s		 - 235 °C



Description

LTE42012R, NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.




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