Features: · Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR· Gold metallization realizes very stable characteristics and excellent lifetime· Input matching cell improves input impedance and allows an easier design of circuits.Application· Common...
LTE42008R: Features: · Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR· Gold metallization realizes very stable characteristics and excellent lifetime· Inpu...
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SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VCBO | collector-base voltage | open emitter | - | 40 | V |
VCER | collector-emitter voltage | RBE =250W | - | 35 | V |
VCEO | emitter-base voltage | open base | - | 16 | V |
VEBO | emitter-base voltage | open collector | - | 3 | V |
IC | DC collector current (DC) | - | 450 | mA | |
Ptot | total power dissipation | Tmb<= 75 °C | - | 7.5 | W |
Tstg | storage temperature | -65 | +200 | °C | |
Tj | operating junction temperature | - | 200 | °C | |
Tsld | soldering temperature | at 0.3 mm from ceramic; t <= 10 s |
- | 235 | °C |