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LS5909

Features: `LOW DRIFT |VGS1-2 /T|= 5mV/°C max.`ULTRA LOW LEAKAGE IG = 150fA TYP.`LOW PINCHOFFVP= 2V TYP.Specifications Maximum Temperatures Storage Temperature -65 to 150 Operating Junction Temperature +150 Maximum Voltage and Current for Each Transistor NOTE 1 -VGSS Gate Volta...

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LS5909: Features: `LOW DRIFT |VGS1-2 /T|= 5mV/°C max.`ULTRA LOW LEAKAGE IG = 150fA TYP.`LOW PINCHOFFVP= 2V TYP.Specifications Maximum Temperatures Storage Temperature -65 to 150 Operating Junct...

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Part Number:
LS5909
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`LOW DRIFT                                       |VGS1-2 /T|= 5mV/°C max.
`ULTRA LOW LEAKAGE                       IG = 150fA TYP.
`LOW PINCHOFF                                VP= 2V TYP.


Specifications

Maximum Temperatures
Storage Temperature -65 to 150
Operating Junction Temperature +150
Maximum Voltage and Current for Each Transistor NOTE 1
-VGSS Gate Voltage to Drain or Source 40V
-VDSO Drain to Source Voltage 40V
-IG(f) Gate Forward Current 10mA
-IG Gate Reverse Current 10A
Maximum Power Dissipation
Device Dissipation @ Free Air - Total 40mW @ +125



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