Features: `LOW DRIFT |VGS1-2 /T|= 5mV/°C max.`ULTRA LOW LEAKAGE IG = 150fA TYP.`LOW PINCHOFFVP= 2V TYP.Specifications Maximum Temperatures Storage Temperature -65 to 150 Operating Junction Temperature +150 Maximum Voltage and Current for Each Transistor NOTE 1 -VGSS Gate Volta...
LS5906: Features: `LOW DRIFT |VGS1-2 /T|= 5mV/°C max.`ULTRA LOW LEAKAGE IG = 150fA TYP.`LOW PINCHOFFVP= 2V TYP.Specifications Maximum Temperatures Storage Temperature -65 to 150 Operating Junct...
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Maximum Temperatures | ||
Storage Temperature | -65 to 150 | |
Operating Junction Temperature | +150 | |
Maximum Voltage and Current for Each Transistor NOTE 1 | ||
-VGSS | Gate Voltage to Drain or Source | 40V |
-VDSO | Drain to Source Voltage | 40V |
-IG(f) | Gate Forward Current | 10mA |
-IG | Gate Reverse Current | 10A |
Maximum Power Dissipation | ||
Device Dissipation @ Free Air - Total | 40mW @ +125 |