LP7612P70 Selling Leads, Price trend, LP7612P70 DataSheet download, circuit diagram from SeekIC.com

Features: · 20 dBm Output Power at 1-dB Compression at 18 GHz· 7.5 dB Power Gain at 18 GHz· 16 dB Small Signal Gain at 2 GHz· 0.8 dB Noise Figure at 2 GHzApplication·Typical applications include high dynamic range receiver preamplifiers for commercial applications including Cellular/PCS systems, ...

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SeekIC No. : 004399049 Detail

LP7612P70: Features: · 20 dBm Output Power at 1-dB Compression at 18 GHz· 7.5 dB Power Gain at 18 GHz· 16 dB Small Signal Gain at 2 GHz· 0.8 dB Noise Figure at 2 GHzApplication·Typical applications include hig...

LP7612P70 Data Sheet

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Part Number:: LP7612P70
Supply Ability:: 5000

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1~5000

Unit Price
Negotiable

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15 Days

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Upload time: 2025/2/15

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Product Details

Description

Features:

· 20 dBm Output Power at 1-dB Compression at 18 GHz
· 7.5 dB Power Gain at 18 GHz
· 16 dB Small Signal Gain at 2 GHz
· 0.8 dB Noise Figure at 2 GHz

Application

·Typical applications include high dynamic range receiver preamplifiers for commercial applications including Cellular/PCS systems, WLAN and WLL systems, and other types of high-gain applications for radio link systems.FONT>

Specifications

Parameter	Symbol	Test Conditions		Max	Units
Drain-Source Voltage	V_DS	T_Ambient = 22 ± 3		6	V
Gate-Source Voltage	V_GS	T_Ambient = 22 ± 3		-3	V
Drain-Source Current	I_DS	T_Ambient = 22 ± 3		2xI_DSS	mA
Gate Current	I_G	T_Ambient = 22 ± 3		5	mA
RF Input Power	P_IN	T_Ambient = 22 ± 3		60	mW
Channel Operating Temperature	T_CH	T_Ambient = 22 ± 3		175
Storage Temperature	T_STG	-	-65	175
Total Power Dissipation	P_TOT	T_Ambient = 22 ± 3		400	mW

Notes:
` Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
` Power Dissipation defined as: P_TOT º (P_DC + P_IN) P_OUT, where
                                                    P_DC: DC Bias Power
                                                    P_IN: RF Input Power
                                                    P_OUT: RF Output Power
` Absolute Maximum Power Dissipation to be de-rated as follows above 25:
                                                    P_TOT= 400mW (2.7 mW/) x T_HS
                                                   where T_HS = heatsink or ambient temperature.
` This PHEMT is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these devices.

Description

`The LP7612P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT), utilizing an Electron-Beam direct-write 0.25 m by 200 m Schottky barrier gate. The recessed "mushroom" Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range. The LP7612's active areas are passivated with Si₃N₄, and the P70 ceramic package is ideal for low-cost, high-performance applications that require a surface-mount package.

LP7612P70

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