LP7612

Features: · 21 dBm Output Power at 1-dB Compression at 18 GHz· 9.5 dB Power Gain at 18 GHz· 1.0 dB Noise Figure at 18 GHz· 55% Power-Added EfficiencyApplication·Applications Notes are available from your local Filtronic Sales Representative or directly from the factory. Complete design data, inclu...

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SeekIC No. : 004399048 Detail

LP7612: Features: · 21 dBm Output Power at 1-dB Compression at 18 GHz· 9.5 dB Power Gain at 18 GHz· 1.0 dB Noise Figure at 18 GHz· 55% Power-Added EfficiencyApplication·Applications Notes are available from...

floor Price/Ceiling Price

Part Number:
LP7612
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

· 21 dBm Output Power at 1-dB Compression at 18 GHz
· 9.5 dB Power Gain at 18 GHz
· 1.0 dB Noise Figure at 18 GHz
· 55% Power-Added Efficiency



Application

·Applications Notes are available from your local Filtronic Sales Representative or directly from the factory. Complete design data, including S-parameters, noise data, and large-signal models are available on the Filtronic web site.


Specifications

Parameter

Symbol

Test Conditions

 

Max

Units

Drain-Source Voltage

VDS

TAmbient = 22 ± 3

 

-8

V

Gate-Source Voltage

VGS

TAmbient = 22 ± 3

 

3

V

Drain-Source Current

IDS

TAmbient = 22 ± 3

 

2xIDSS

mA

Gate Current

IG

TAmbient = 22 ± 3

 

10

mA

RF Input Power

PIN

TAmbient = 22 ± 3

 

100

mW

Channel Operating Temperature

TCH

TAmbient = 22 ± 3

 

175

Storage Temperature

TSTG

-

-65

175

Total Power Dissipation

PTOT

TAmbient = 22 ± 3

 

500

mW

Notes:
` Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
` Power Dissipation defined as: PTOT º (PDC + PIN) POUT, where
                                                    PDC: DC Bias Power
                                                    PIN: RF Input Power
                                                    POUT: RF Output Power
` Absolute Maximum Power Dissipation to be de-rated as follows above 25:
                                                    PTOT= 500mW (3.3mW/) x THS
                                                    where THS = heatsink or ambient temperature.



Description

`The LP7612 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 m by 200 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range. The LP7612 also features Si3N4 passivation and is available in a P70 ceramic package.

`Typical applications include high dynamic range receiver preamplifiers for commercial applications including Cellular/PCS systems, WLL and WLAN systems, and broadband amplifiers.


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